FinFET design with reduced current crowding
View Patent ↗An integrated circuit structure includes a substrate and a fin field-effect transistor (FinFET). The FinFET includes a fin over the substrate and having a first fin portion and a second fin portion. A gate stack is formed on a top surface and sidewalls of the first fin portion. An epitaxial semiconductor layer has a first portion formed directly over the second fin portion, and a second portion formed on sidewalls of the second fin portion. A silicide layer is formed on the epitaxial semiconductor layer. A peripheral ratio of a total length of an effective silicide peripheral of the FinFET to a total length of a fin peripheral of the FinFET is greater than 1.
1. An integrated circuit structure comprising:
a substrate; and
a fin field-effect transistor (FinFET) comprising:
a fin over the substrate and comprising a first fin portion and a second fin portion;
a gate stack on a top surface and sidewalls of the first fin portion;
an epitaxial semiconductor layer comprising a first portion directly over the second fin portion, and a second portion on sidewalls of the second fin portion;
a silicide layer on the epitaxial semiconductor layer, wherein a peripheral ratio of a total length of an effective silicide peripheral of the FinFET to a total length of a fin peripheral of the FinFET is greater than 1, and wherein the effective silicide peripheral and the fin peripheral each have a different cross sectional profile shape in a same plane; and
a dummy fin, wherein the epitaxial semiconductor layer extends on a top surface and sidewalls of the dummy fin, and wherein the effective silicide peripheral does not comprise any sidewall portion on outer sides of the dummy fin.
2. The integrated circuit structure of claim 1 , wherein the peripheral ratio is greater than about 1.1.
3. The integrated circuit structure of claim 2 , wherein the peripheral ratio is between about 1.1 and 1.4.
4. The integrated circuit structure of claim 1 , wherein the effective silicide peripheral comprises a top portion and a sidewall portion on the second portion of the epitaxial semiconductor layer.
5. The integrated circuit structure of claim 1 , wherein a top portion of the effective silicide peripheral extending over a plurality of fins is substantially flat.
6. The integrated circuit structure of claim 1 , wherein a top portion of the effective silicide peripheral extending over a plurality of fins is not flat, with a portion of the effective silicide peripheral directly over the second fin portion being higher than an additional portion of the effective silicide peripheral horizontally between the second fin portion and an additional fin of the FinFET.
7. The integrated circuit structure of claim 1 , wherein the silicide layer is conformal, with a top surface of the silicide layer following a contour of a top surface of the epitaxial semiconductor layer.
8. The integrated circuit structure of claim 1 , wherein the epitaxial semiconductor layer comprises a sidewall portion on an end sidewall of the second fin portion.
9. An integrated circuit structure comprising:
a substrate;
an insulation region over the substrate; and
a fin field-effect transistor (FinFET) comprising:
a fin over the substrate and comprising a first fin portion and a second fin portion;
a gate stack on a top surface and sidewalls of the first fin portion;
an epitaxial semiconductor layer comprising a top portion directly over the second fin portion and sidewall portions directly over the insulation region; and
a silicide layer on, and having an interface with, the epitaxial layer, wherein a peripheral ratio of a length of the interface to a length of a fin peripheral of the fin is greater than 1, and
a dummy fin covered by the epitaxial semiconductor layer, and wherein outer sidewall portions from the dummy fin do not contribute to an effective silicide peripheral of the FinFET.
10. The integrated circuit structure of claim 9 , wherein the silicide layer is conformal with a top thickness being substantially equal to a sidewall thickness.
11. The integrated circuit structure of claim 9 , wherein the silicide layer comprises sidewall portions on the sidewall portions of the epitaxial semiconductor layer, and wherein bottom ends of the silicide layer are vertically spaced apart from top surfaces of the insulation region.
12. The integrated circuit structure of claim 9 , wherein the peripheral ratio is greater than about 1.1.
13. The integrated circuit structure of claim 9 , wherein the peripheral ratio is between about 1.1 and 1.4.
14. An integrated circuit structure comprising:
a substrate; and
a fin field-effect transistor (FinFET) comprising:
a fin over the substrate and comprising a first fin portion and a second fin portion;
a gate stack on a top surface and sidewalls of the first fin portion;
an epitaxial semiconductor layer comprising a first portion directly over the second fin portion, and a second portion on sidewalls of the second fin portion;
a silicide layer on the epitaxial semiconductor layer, wherein a peripheral ratio of a total length of an effective silicide peripheral of the FinFET to a total length of a fin peripheral of the FinFET is greater than 1; and
a dummy fin, wherein the epitaxial semiconductor layer extends on a top surface and sidewalls of the dummy fin, and wherein the effective silicide peripheral does not comprise any sidewall portion on outer sides of the dummy fin.
15. The integrated circuit structure of claim 14 , wherein the peripheral ratio is greater than about 1.1.
16. The integrated circuit structure of claim 15 , wherein the peripheral ratio is between about 1.1 and 1.4.
17. The integrated circuit structure of claim 14 , wherein the effective silicide peripheral comprises a top portion and a sidewall portion on the second portion of the epitaxial semiconductor layer.