Semiconductor package
A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).
1. A semiconductor package, comprising:
a substrate on which a plurality of conductive elements is formed;
at least one semiconductor chip electrically connected to at least one of the plurality of conductive elements; and
a shielding can mounted on the substrate, the shielding can surrounding and spaced apart from the at least one semiconductor chip, the shielding can being electrically connected to at least one conductive element of the plurality of conductive elements, wherein the shielding can is formed of a multi-layer comprising a metal layer, an insulating adhesive layer and a soft magnetic material layer between the metal layer and the insulating adhesive layer, wherein the insulating adhesive layer is between the at least one semiconductor chip and the soft magnetic material layer.
2. The semiconductor package of claim 1 , wherein the shielding can comprises an iron oxide and at least one metal, the metal being selected from the group consisting of nickel (Ni), zinc (Zn), manganese (Mn), cobalt (Co), magnesium (Mg), aluminum (Al), barium (Ba), copper (Cu), and iron (Fe).
3. The semiconductor package of claim 1 , wherein the plurality of conductive elements comprises ground wires.
4. The semiconductor package of claim 3 , further comprising at least one through via (TV) extending in a direction perpendicular to the substrate and electrically connecting the shielding can and the ground wires.
5. The semiconductor package of claim 1 , wherein the shielding can is mounted such that it surrounds an upper portion and side portions of the substrate.
6. The semiconductor package of claim 1 , further comprising a heat slug formed on the shielding can.
7. The semiconductor package of claim 1 , wherein the at least one semiconductor chip comprises a plurality of semiconductor chips, the plurality of semiconductor chips having a vertical stack structure.
8. The semiconductor package of claim 1 , wherein a thickness of the shielding can is smaller than 300 μm.