Apparatus and method to adjust clock duty cycle of memory
An embodiment of the invention provides a memory controller for controlling a memory. The memory controller comprises a pulse width modulation module, a voltage comparator and a duty cycle calibration device. The pulse width modulation module is suitable for receiving a clock signal to generate a first voltage. The voltage comparator is suitable for receiving and comparing a reference voltage with the first voltage to output a comparison signal. The duty cycle calibration device is suitable for adjusting a duty cycle of the clock signal according to the comparison signal.
1. A memory system, comprising:
a memory; and
a memory controller suitable for controlling the memory, comprising:
a duty cycle detector suitable for detecting a value of a duty cycle of a clock signal and outputting a detection result; and
a duty cycle calibration device suitable for adjusting the duty cycle of the clock signal according to the detection result,
wherein the duty cycle detector comprises:
a phase shifter suitable for receiving and shifting the clock signal to generate a shifted clock signal;
a flip flop suitable for receiving the clock signal and the shifted clock signal to generate an output signal; and
a counter to count the number of at least one of logic 1 and 0 of the output signal to detect the value of duty cycle of the clock signal.
2. The system as claimed in claim 1 , wherein the duty cycle calibration device comprises:
a duty cycle corrector suitable for generating a duty cycle calibration signal according to the detection result; and
a duty adjuster suitable for adjusting the duty cycle of the clock signal according to the duty cycle calibration signal.
3. The system as claimed in claim 1 , wherein the duty cycle of the clock signal is adjusted to be substantially equal to 50%.
4. The system as claimed in claim 1 , further comprising a clock buffer coupled to the duty cycle calibration device suitable for storing the clock signal.
5. The system as claimed in claim 2 , wherein the duty cycle calibration signal comprises a phase signal that represents a duty cycle calibration amount, and a select signal which indicates that the duty cycle of the clock signal is larger than or less than a target duty cycle.
6. A memory system, comprising:
a memory; and
a memory controller suitable for controlling the memory, comprising:
a first I/O pad;
a second I/O pad;
a duty cycle calibration device suitable for receiving and adjusting a duty cycle of a clock signal to output a calibrated clock signal, wherein the calibrated clock signal is transmitted to the memory via the first I/O pad; and
a duty cycle detector suitable for receiving and detecting a value of a duty cycle of the calibrated clock signal via the second I/O pad and outputting a detection result, wherein the duty cycle calibration device adjusts the duty cycle of the clock signal according to the detection result,
wherein the duty cycle detector comprises:
a phase shifter suitable for receiving and shifting the clock signal to generate a shifted clock signal;
a flip flop suitable for receiving the clock signal and the shifted clock signal to generate an output signal; and
a counter to count the number of at least one of logic 1 and 0 of the output signal to detect the value of duty cycle of the clock signal.
7. The system as claimed in claim 6 , wherein the duty cycle calibration device comprises:
a duty cycle corrector suitable for generating a duty cycle calibration signal according to the detection result; and
a duty adjuster suitable for adjusting the duty cycle of the clock signal according to the duty cycle calibration signal.
8. The system as claimed in claim 6 , wherein the duty cycle of the clock signal is adjusted to be substantially equal to 50%.
9. The system as claimed in claim 6 , further comprising:
a level shifter coupled between the duty cycle calibration device and the first I/O pad to adjust a voltage level of the calibrated clock signal.