Method for packing solid organometallic compound and packed container

1. A vapor phase epitaxial growth apparatus comprising a solid trimethylindium-packed container packed with solid trimethylindium,

wherein a grain size of the solid trimethylindium is 8 mm or less, and an amount of the solid trimethylindium having a grain size of 2.5 to 4.75 mm is 50 to 100% by weight of a total amount of the solid trimethylindium.

2. A vapor phase epitaxial growth apparatus comprising a solid trimethylindium-packed container, wherein a grain size of the solid trimethylindium is 8 mm or less, and an amount of the solid trimethylindium having a grain size of 2.5 to 4.75 mm is 50 to 100% by weight of a total amount of the solid trimethylindium, and

wherein the container for packing the solid trimethylindium has a carrier gas inlet and a carrier gas outlet and has a structure in which the inside of the container is partitioned into a plurality of vertical spaces so that a carrier gas introduced from the carrier gas inlet flows through each of the vertical spaces and is discharged from the carrier gas outlet.

3. The vapor phase epitaxial growth apparatus of claim 2 , wherein

the container for packing a solid trimethylindium is configured such that:

(a) the inside of the container is partitioned by at least one partition in a vertical direction to form at least two partitioned spaces in the container;

(b) the spaces formed by partitioning the inside of the container by the partition include a space having the carrier gas inlet and a space having the carrier gas outlet; and

(c) the partition inside the container includes a partition having an opening which allows the carrier gas to flow from the carrier gas inlet via each of the spaces inside the container to the carrier gas outlet.

4. The vapor phase epitaxial growth apparatus of claim 3 , wherein

when the opening is placed in a lower portion of the partition, the opening is placed in a position located at one-third or less of an internal height of the container measured from an internal bottom thereof, or when the opening is placed in an upper portion of the partition, the opening is placed in a position located at two-third or more of the internal height of the container measured from the internal bottom thereof.

5. The vapor phase epitaxial growth apparatus of claim 2 , wherein

the container is provided with a packing opening so as to pack the solid trimethylindium into the spaces formed inside the container by partitioning the container by the partition.

6. A vapor phase epitaxial growth apparatus comprising a solid trimethylindium-packed container in which a solid trimethylindium is packed together with a packing material,

wherein a grain size of the solid trimethylindium is 8 mm or less, and an amount of the solid trimethylindium having a grain size of 2.5 to 4.75 mm is 50 to 100% by weight of a total amount of the solid trimethylindium.

7. The vapor phase epitaxial growth apparatus of claim 6 , wherein the packing material has a size of 0.8 to 8 mm.

8. A vapor phase epitaxial growth apparatus comprising a solid trimethylindium-packed container, wherein a grain size of the solid trimethylindium is 8 mm or less, and an amount of the solid trimethylindium having a grain size of 2.5 to 4.75 mm is 50 to 100% by weight of a total amount of the solid trimethylindium, and

the container for packing the solid trimethylindium has a carrier gas inlet and a carrier gas outlet and has a structure in which the inside of the container is partitioned into a plurality of vertical spaces so that a carrier gas introduced from the carrier gas inlet flows through each of the vertical spaces as a downward flow formed by means of carrier gas flow direction inverting means and is discharged from the carrier gas outlet.

9. The vapor phase epitaxial growth apparatus of claim 8 , wherein

the container for packing the solid trimethylindium is configured such that:

(d) the inside of the container is partitioned by at least one partition in a vertical direction to form at least two partitioned spaces in the container;

(e) the spaces formed by partitioning the inside of the container by the partition include a space having the carrier gas inlet and a space having the carrier gas outlet;

(f) the partition inside the container includes a partition having a communication flow passage which has a lower opening and an upper opening each for allowing a carrier gas to flow from the carrier gas inlet via each of the spaces inside the container to the carrier gas outlet;

(g) the communication flow passage is configured such that the carrier gas introduced inside the container is introduced from the lower opening of the communication flow passage and is discharged from the upper opening of the passage; and

(h) the container has a discharging flow passage having a lower opening for discharging the carrier gas from a lower portion of the space having the carrier gas outlet to the carrier gas outlet.

10. The vapor phase epitaxial growth apparatus of claim 9 , wherein

the lower opening of the communication flow passage is placed in a position located at one-third or less of an internal height of the container measured from an internal bottom thereof;

the upper opening of the communication flow passage is placed in a position located at two-third or more of the internal height of the container measured from the internal bottom thereof; and

the lower opening of the discharging flow passage is placed in a position located at one-third or less of the internal height of the container measured from the internal bottom thereof.

11. The vapor phase epitaxial growth apparatus of claim 8 , wherein

the container is provided with a packing opening so as to pack the solid trimethylindium into the spaces formed inside the container by partitioning the container by the partition.

12. The vapor phase epitaxial growth apparatus of claim 9 , wherein

the container is provided with a packing opening so as to pack the solid trimethylindium into the spaces formed inside the container by partitioning the container by the partition.