IP Library Granted Patent US 8,673,545
Granted Patent B2
US 8,673,545 · App. 13/834,447 · Granted Mar 18, 2014

Method for manufacturing liquid crystal display device

Inventors: Toshimasa Ishigaki (Chiba, JP); Daisuke Sonoda (Chiba, JP); Masanao Yamamoto (Mobara, JP); Osamu Itou (Hitachi, JP); Takato Hiratsuka (Chiba, JP)
Assignee: Japan Display East Inc.
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Quick Facts
Patent No.
US 8,673,545
App. No.
13/834,447
Granted
Mar 18, 2014
Kind
B2
Abstract

In a method of manufacturing a liquid crystal display device in which a plurality of pixels are arranged in a matrix, each of the pixels has an insulator wall structure at a boundary of the pixels, and a wall electrode is provided at least at a side of the wall structure, the wall structure being formed by: using a chemically amplified resist as a material of the wall structure, a step of applying the chemically amplified resist; a step of exposing and developing the chemically amplified resist; a step of irradiating light on an entire surface to perform post exposure; a step of pre-calcinating the chemically amplified resist at a temperature lower than a main calcination temperature; and a step of performing main calcination at a temperature higher than a pre-calcination temperature.

Claims (23)

1. A method for manufacturing a liquid crystal display device in which a plurality of pixels are arranged in a matrix, each of the pixels has an insulator wall structure at a boundary of the pixels, and a wall electrode is provided at least at a side of the wall structure, the wall structure being formed by:

using a chemically amplified resist as a material of the wall structure,

a step of applying the chemically amplified resist; and

a step of exposing and developing the chemically amplified resist.

2. The method for manufacturing a liquid crystal display device according to claim 1 , wherein a positive resist is used as the chemically amplified resist.

3. The method for manufacturing a liquid crystal display device according to claim 1 , further comprising, after the exposing and developing of the chemically amplified resist, the steps of:

post-exposing a remaining chemically amplified resist by irradiating light on entire remaining chemically amplified resist;

pre-calcinating the chemically amplified resist at a temperature lower than a main calcination temperature; and

performing a main calcination at a temperature higher than a pre-calcination temperature.

4. The method for manufacturing a liquid crystal display device according to claim 3 , wherein the pre-calcination temperature is 150° C. or lower and the main calcination temperature is 200° C. or higher.

5. The method for manufacturing a liquid crystal display device according to claim 4 , wherein the pre-calcination temperature is 80 to 120° C., which is equal to or lower than a glass transition temperature of a resist material, and the main calcination temperature is 200 to 250° C. at which a hardening reaction proceeds.

6. The method for manufacturing a liquid crystal display device according to claim 1 , wherein a tapered angle of the formed wall structure is equal to or larger than 70 degrees and smaller than 90 degrees.

7. The method for manufacturing a liquid crystal display device according to claim 1 , wherein an insulating and planarizing film is further formed by:

using a positive resist as a material of the insulating and planarizing film provided between the wall structures,

a step of applying the positive resist;

a step of exposing and developing the positive resist; and

a step of performing main calcination on the positive resist.

8. The method for manufacturing a liquid crystal display device according to claim 7 , wherein a chemically amplified positive resist is used as the positive resist.

9. The method for manufacturing a liquid crystal display device according to claim 8 , wherein as the performing of the main calcination, the main calcination is performed at 200° C. or higher.

10. The method for manufacturing a liquid crystal display device according to claim 8 , wherein the main calcination is performed at a rate of temperature increase of 5° C. or higher.

11. The method for manufacturing a liquid crystal display device according to claim 8 , wherein the main calcination is performed at a rate of temperature increase of 10° C. or higher.

12. The method for manufacturing a liquid crystal display device according to claim 8 , wherein the same material is used for both a resist material of the wall structure and a resist material of the insulating and planarizing film.

13. The method for manufacturing a liquid crystal display device according to claim 7 , wherein when the resist is exposed, the resist is exposed by a mask having an opening which is equal to or larger than a horizontal width of an apex of the wall.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2025
From: JAPAN DISPLAY INC.
To: MAGNOLIA WHITE CORPORATION
Reel/Frame 073114/0176 →
CHANGE OF NAME Recorded Jul 24, 2025
From: JAPAN DISPLAY EAST INC.
To: JAPAN DISPLAY INC.
Reel/Frame 072558/0154 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2013
From: ISHIGAKI, TOSHIMASA; SONODA, DAISUKE; YAMAMOTO, MASANAO; ITOU, OSAMU; HIRATSUKA, TAKATO
To: JAPAN DISPLAY EAST INC.
Reel/Frame 030012/0569 →
Priority Claims (1)
JP 2012-094463 · Apr 18, 2012 · national
Continuity (1)
Related Publication 20130280661A1 · Oct 24, 2013