Light emitting device

1. A light emitting device comprising:

a base member;

an interconnect pattern disposed on an upper surface of the base member; and

a light reflecting layer comprising (i) a first layer made of a metal material and disposed on a part of an upper surface of the interconnect pattern, and (ii) a second layer comprising a dielectric multilayer reflecting film that includes stacked layers of dielectric films of different refractive indices and covering an upper surface and side surfaces of the first layer;

a light emitting element chip fixed to face at least a part of the light reflecting layer; and

a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip,

wherein the base member includes an extending portion that extends outwardly through the light transmissive sealing member in a plan view of the light emitting device

wherein the extending portion of the base member is covered with the light reflecting layer, and

wherein the interconnect pattern is covered with the light reflecting layer from an upper surface at a periphery region of the interconnect pattern to an outer side surface of the interconnect pattern contiguously.

2. The light emitting device according to claim 1 , wherein the second layer covers an upper surface of the base member exposed through the interconnect pattern.

3. The light emitting device according to claim 2 , wherein the first layer is disposed between the upper surface of the base member exposed through the interconnect pattern and the second layer, and spaced apart from the interconnect pattern.

4. The light emitting device according to claim 1 , wherein the light reflecting layer includes a third layer covering an upper surface and side surfaces of the second layer, and wherein the third layer is made of a material having a refractive index smaller than a refractive index of the light transmissive member, and wherein the third layer has a thickness capable of totally reflecting light emitted from the light emitting element chip.

5. The light emitting device according to claim 4 , wherein the third layer is a thin dielectric film having a low refractive index with a thickness of 300 nm or more.

6. A light emitting device comprising:

a base member;

an interconnect pattern disposed on an upper surface of the base member;

a light reflecting layer having

a first layer made from a metal material and disposed on an upper surface of the base member,

a second layer comprising a dielectric multilayer reflecting film that includes stacked layers of dielectric films of different refractive indices and covering an upper surface of the first layer, and

a third layer covering an upper surface of the second layer;

a light emitting element chip fixed so as to face at least a part of the light reflecting layer; and

a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip,

wherein the third layer is made of a material having a refractive index smaller than a refractive index of the light transmissive sealing member,

wherein the base member comprises a mounting portion where the light emitting element chip is mounted, and the light emitting element chip comprises electrodes on a surface which faces the mounting portion,

wherein the base member extends outwardly through the light transmissive sealing member in a plan view of the light emitting device, and

wherein portions of the interconnect pattern on the extending portion of the base member are covered with the light reflecting layer from an upper surface at a periphery region of the interconnect pattern to an outer side surface of the interconnect pattern contiguously.

7. The light emitting device according to claim 6 , wherein the third layer has a thickness such that the third layer is capable of totally reflecting light emitted from the light emitting element chip.

8. The light emitting device according to claim 1 , wherein the first layer is made of at least one selected from the group consisting of Ag, Al, and Rh.

9. The light emitting device according to claim 1 , wherein a thickness of the first layer is from 50 nm to 2000 nm.

10. The light emitting device according to claim 1 , wherein the dielectric multilayer reflecting film of the second layer is made by stacking at least two dielectric films respectively made of an oxide or nitride of element selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al.

11. The light emitting device according to claim 1 , wherein, where the second layer has a first dielectric film and a second dielectric film alternately stacked, the second layer is so configured that the first dielectric film is from 70 nm to 95 nm in thickness and the second dielectric film is from 40 nm to 60 nm in thickness, with the first dielectric film and the second dielectric film being stacked together from 1 to 20 alternations.

12. The light emitting device according to claim 4 , wherein the third layer is made of SiO 2 .

13. The light emitting device according to claim 4 , wherein a thickness of the third layer is from 300 nm to 2000 nm.

14. The light emitting device according to claim 6 , wherein the first layer is made of at least one selected from the group consisting of Ag, Al, and Rh.

15. The light emitting device according to claim 6 , wherein a thickness of the first layer is from 50 nm to 2000 nm.

16. The light emitting device according to claim 6 , wherein the dielectric multilayer reflecting film of the second layer is made by stacking at least two dielectric films respectively made of an oxide or nitride of element selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al.

17. The light emitting device according to claim 6 , wherein where the second layer has a first dielectric film and a second dielectric film alternately stacked, the second layer is so configured that the first dielectric film is from 70 nm to 95 nm and the second dielectric film is from 40 nm to 60 nm, with the first dielectric film and the second dielectric film being stacked from 1 to 20 alternations.

18. The light emitting device according to claim 6 , wherein the third layer is made of SiO 2 .

19. The light emitting device according to claim 6 , wherein a thickness of the third layer is from 300 nm to 2000 nm.

20. The light emitting device according to claim 1 , wherein the base member further comprises an external connection electrode terminal on the extending portion of the base member, and wherein the light reflecting layer is arranged to cover the interconnect pattern on the extending portion of the base member in areas other than the external connection electrode terminal.

21. The light emitting device according to claim 1 , wherein the base member is made of ceramic.