Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

1. A method for determining spatially resolved properties of an indirect bandgap semiconductor device, said method comprising the steps of:

externally exciting said indirect bandgap semiconductor device to cause said indirect bandgap semiconductor device to emit luminescence;

capturing two or more images of said luminescence emitted from said indirect bandgap semiconductor device in response to said external excitation, wherein the luminescence in each of said two or more luminescence images is emitted from said indirect bandgap semiconductor device in response to different excitation conditions; and

determining spatially resolved properties of said indirect bandgap semiconductor device based on a comparison of relative intensities of regions in said two or more luminescence images.

2. A method according to claim 1 , wherein said step of determining spatially resolved properties comprises the step of spatially resolving electrically isolated or poorly connected regions in said indirect bandgap semiconductor device.

3. A method according to claim 1 , wherein said two or more luminescence images are selected from the group consisting of:

an electroluminescence image generated by exciting said indirect bandgap semiconductor device with an electrical signal;

a photoluminescence image generated by exciting said indirect bandgap semiconductor device with incident light suitable for inducing photoluminescence whilst contact terminals of said indirect bandgap semiconductor device are maintained in an open circuit state; and

a photoluminescence image generated by exciting said indirect bandgap semiconductor device with incident light suitable for inducing photoluminescence and simultaneously varying a voltage level across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

4. A method according to claim 1 , wherein said step of externally exciting said indirect bandgap semiconductor device comprises at least one step selected from the group consisting of:

illuminating said indirect bandgap semiconductor device with light suitable for inducing photoluminescence in said indirect bandgap semiconductor device; and

applying an electrical signal to contact terminals of said indirect bandgap semiconductor device to induce electroluminescence in said indirect bandgap semiconductor device.

5. A method according to claim 1 , wherein:

said step of externally exciting said indirect bandgap semiconductor device comprises a step of illuminating said indirect bandgap semiconductor device with light suitable for inducing photoluminescence in said indirect bandgap semiconductor device; and

said method comprises a further step of simultaneously varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

6. A method according to claim 5 , wherein said step of determining spatially resolved properties comprises the step of comparing intensities of corresponding regions in at least one photoluminescence image without varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value and at least one photoluminescence image with varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

7. A method according to claim 5 , wherein said step of simultaneously varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value comprises a step selected from the group consisting of:

applying an external bias across contact terminals of said indirect bandgap semiconductor device;

applying a load across contact terminals of said indirect bandgap semiconductor device;

applying a short circuit across contact terminals of said indirect bandgap semiconductor device;

applying a voltage across contact terminals of said indirect bandgap semiconductor device;

injecting current into contact terminals of said indirect bandgap semiconductor device; and

extracting current from contact terminals of said indirect bandgap semiconductor device.

8. A method according to claim 1 , wherein said method is applied to an indirect bandgap semiconductor device comprising one or more of a silicon device, a photovoltaic device and a solar cell.

9. A method according to claim 8 , wherein said method is applied to a solar cell comprising a portion of an indirect bandgap semiconductor wafer having at least one metal pattern disposed on a surface thereof.

10. A method for identifying electrically isolated or poorly connected regions in a solar cell, said solar cell comprising a portion of an indirect bandgap semiconductor wafer having at least one metal pattern disposed on a surface thereof, said method comprising the steps of:

exciting said solar cell to emit luminescence;

capturing at least one image of said emitted luminescence; and

processing said at least one luminescence image to identify breaks in said metal pattern based on a comparison of intensities of regions in said at least one luminescence image.

11. A method according to claim 10 , wherein said step of exciting said solar cell to emit luminescence comprises the sub-steps of:

illuminating said solar cell with incident light suitable for inducing photoluminescence; and

simultaneously varying a voltage level across contact terminals of said solar cell relative to an open circuit value.

12. A method according to claim 11 , wherein said sub-step of simultaneously varying a voltage level across contact terminals of said solar cell comprises a step selected from the group consisting of:

applying an external bias across contact terminals of said solar cell;

applying a load across contact terminals of said solar cell;

applying a short circuit across contact terminals of said solar cell;

applying a voltage across contact terminals of said solar cell;

injecting current into contact terminals of said solar cell; and

extracting current from contact terminals of said solar cell.

13. A method according to claim 10 , wherein a break in said metal pattern is identified based on detection of a region of relatively higher luminescence intensity.

14. A method according to claim 10 , wherein said step of processing said at least one luminescence image comprises the step of identifying breaks in said metal pattern based on a comparison of relative intensities of regions in at least two luminescence images, the luminescence in said at least two luminescence images being emitted from said indirect bandgap semiconductor device in response to different excitation conditions.

15. A method according to claim 14 , wherein said at least two luminescence images are selected from the group consisting of:

an electroluminescence image generated by exciting said solar cell with an electrical signal;

a photoluminescence image generated by exciting said solar cell with incident light suitable for inducing photoluminescence whilst contact terminals of said solar cell are maintained in an open circuit state; and

a photoluminescence image generated by exciting said solar cell with incident light suitable for inducing photoluminescence and simultaneously varying a voltage level across contact terminals of said solar cell relative to an open circuit value.

16. An apparatus for determining spatially resolved properties of an indirect bandgap semiconductor device, said apparatus comprising:

one or more excitation sources configured for exciting said indirect bandgap semiconductor device to emit luminescence;

an image capture device configured for capturing two or more images of said luminescence emitted by said indirect bandgap semiconductor device, wherein the luminescence in each of the two or more luminescence images is emitted from said indirect bandgap semiconductor device in response to different excitation conditions; and

a computer configured for processing said luminescence images to determine spatially resolved properties of said indirect bandgap semiconductor device based on a comparison of relative intensities of regions in said two or more luminescence images.

17. An apparatus according to claim 16 , wherein said spatially resolved properties comprise electrically isolated or poorly connected regions in said indirect bandgap semiconductor device.

18. An apparatus according to claim 16 , wherein said two or more luminescence images are selected from the group consisting of:

an electroluminescence image generated by exciting said indirect bandgap semiconductor device with an electrical signal;

a photoluminescence image generated by exciting said indirect bandgap semiconductor device with incident light suitable for inducing photoluminescence whilst contact terminals of said indirect bandgap semiconductor device are maintained in an open circuit state; and

a photoluminescence image generated by exciting said indirect bandgap semiconductor device with incident light suitable for inducing photoluminescence and simultaneously varying a voltage level across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

19. An apparatus according to claim 16 , wherein said one or more excitation sources comprise:

a light source configured for illuminating said indirect bandgap semiconductor device with light suitable for inducing photoluminescence in said indirect bandgap semiconductor device; or

an electric signal source configured for applying an electrical signal to contact terminals of said indirect bandgap semiconductor device to induce electroluminescence in said indirect bandgap semiconductor device.

20. An apparatus according to claim 16 , further comprising a voltage varying source configured for varying a voltage level across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

21. An apparatus according to claim 20 , wherein said computer is configured to compare intensities of corresponding regions in at least one photoluminescence image without varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value and at least one photoluminescence image with varying a voltage across contact terminals of said indirect bandgap semiconductor device relative to an open circuit value.

22. An apparatus according to claim 20 , wherein said voltage varying source comprises at least one of:

an external bias means;

a load;

a short circuit;

a voltage source;

a current source; or

a current sink.

23. An apparatus according to claim 16 , wherein said indirect bandgap semiconductor device comprises one or more of a silicon device, a photovoltaic device and a solar cell.

24. An apparatus according to claim 23 , wherein said indirect bandgap semiconductor wafer comprises a solar cell having at least one metal pattern disposed on a surface thereof.

25. An apparatus for identifying electrically isolated or poorly connected regions in a solar cell, said solar cell comprising a portion of an indirect bandgap semiconductor wafer having at least one metal pattern disposed on a surface thereof, said apparatus comprising:

an excitation source configured for exciting said solar cell to emit luminescence;

an image capture-device configured for capturing at least one image of said emitted luminescence; and

a computer configured for processing said at least one luminescence image to identify breaks in said metal pattern based on a comparison of intensities of regions in said at least one luminescence image.

26. An apparatus according to claim 25 , wherein said excitation source comprises:

a light source configured for illuminating said solar cell with light suitable for inducing photoluminescence in said solar cell; or

a voltage varying source configured for varying a voltage level across contact terminals of said solar cell relative to an open circuit value.

27. An apparatus according to claim 26 , wherein said voltage varying source comprises at least one of:

an external bias means;

a load;

a short circuit;

a voltage source;

a current source; or

a current sink.

28. An apparatus according to claim 25 , wherein said computer is configured to identify a break in said metal pattern based on detection of a region of relatively high luminescence intensity.

29. An apparatus according to claim 28 , wherein said computer is further configured to identify breaks in said metal pattern based on a comparison of relative intensities of regions in at least two luminescence images,

wherein the luminescence in each of said at least two luminescence images is emitted from said indirect bandgap semiconductor device in response to different excitation conditions.

30. An apparatus according to claim 29 , wherein said at least two luminescence images are selected from the group consisting of:

an electroluminescence image generated by exciting said solar cell with an electrical signal;

a photoluminescence image generated by exciting said solar cell with incident light suitable for inducing photoluminescence whilst contact terminals of said solar cell are maintained in an open circuit state; and

a photoluminescence image generated by exciting said solar cell with incident light suitable for inducing photoluminescence and simultaneously varying a voltage level across contact terminals of said solar cell relative to an open circuit value.