Semiconductor device manufacturing method
A semiconductor device manufacturing method includes forming an insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition; making UV cure on the insulation film being heated at a temperature of 350° C. or below after the forming the insulation film; and making helium plasma processing on the insulation film after the UV cure.
1. A semiconductor device manufacturing method comprising:
forming an inter-layer insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition;
making UV cure on the inter-layer insulation film being heated at a temperature of 350° C. or below after the forming the inter-layer insulation film;
making helium plasma processing on the inter-layer insulation film after the UV cure;
forming a cap film on the inter-layer insulation film after the helium plasma processing, a thickness of the cap film is thinner than a thickness of the inter-layer insulation film;
forming a photoresist pattern on the cap film,
forming a hole in the inter-layer insulation film using the photoresist pattern as a mask; and
forming an interconnection in the hole,
wherein a relative dielectric constant of the inter-layer insulation film is set to 2.7 or below by the helium plasma processing on the inter-layer insulation film.
2. The semiconductor device manufacturing method according to claim 1 , wherein
the inter-layer insulation film is silicon oxide carbide film.
3. The semiconductor device manufacturing method according to claim 1 , wherein
in the UV cure, the UV cure is made on the inter-layer insulation film being heated at a temperature in a range of 230° C.-350° C.
4. The semiconductor device manufacturing method according to claim 2 , wherein
in the UV cure, the UV cure is made on the inter-layer insulation film being heated at a temperature in a range of 230° C.-350° C.
5. The semiconductor device manufacturing method according to claim 1 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
6. The semiconductor device manufacturing method according to claim 2 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
7. The semiconductor device manufacturing method according to claim 3 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
8. The semiconductor device manufacturing method according to claim 4 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
9. The semiconductor device manufacturing method according to claim 5 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature in a range of 100° C.-350° C.
10. The semiconductor device manufacturing method according to claim 6 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature in a range of 100° C.-350° C.
11. The semiconductor device manufacturing method according to claim 7 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature in a range of 100° C.-350° C.
12. The semiconductor device manufacturing method according to claim 8 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature in a range of 100° C.-350° C.
13. A semiconductor device manufacturing method comprising:
forming an inter-layer insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition;
making UV cure on the inter-layer insulation film being heated;
making helium plasma processing on the inter-layer insulation film after the UV cure;
forming a cap film directly on the inter-layer insulation film after the helium plasma processing;
forming a photoresist pattern directly on the cap film;
forming a hole in the inter-layer insulation film and the cap film by etching the inter-layer insulation film and the cap film using the photoresist pattern as a mask; and
forming an interconnection in the hole.
14. The semiconductor device manufacturing method according to claim 13 , wherein
the inter-layer insulation film is silicon oxide carbide film.
15. The semiconductor device manufacturing method according to claim 13 , wherein
in the UV cure, the UV cure is made on the inter-layer insulation film being heated at a temperature in a range of 230° C.-350° C.
16. The semiconductor device manufacturing method according to claim 14 , wherein
in the UV cure, the UV cure is made on the inter-layer insulation film being heated at a temperature in a range of 230° C.-350° C.
17. The semiconductor device manufacturing method according to claim 13 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
18. The semiconductor device manufacturing method according to claim 14 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.
19. The semiconductor device manufacturing method according to claim 15 , wherein
in the helium plasma processing, the helium plasma processing is made on the inter-layer insulation film being heated at a temperature of 350° C. or below.