Power module and manufacturing method thereof
A power module includes a substrate having a surface on which a plurality of wiring patterns are formed, a semiconductor device mounted on the substrate and electrically connected to a part of the plurality of wiring patterns, and a terminal portion with a lead electrically connected to the other part of the plurality of wiring patterns, and is configured that the lead of the terminal portion is formed by laminating a plurality of metal members which contain a material substantially the same as or softer than the material for forming the other part of wiring patterns, and the material of the plurality of metal members, which is the same as or softer than the material for forming the other part of wiring patterns is electrically connected to the other part of wiring patterns through ultrasonic bonding.
1. A power module comprising:
a substrate having a surface on which a plurality of wiring patterns are formed;
a semiconductor device mounted on the substrate and electrically connected to some of the plurality of wiring patterns; and
a terminal portion with a lead electrically connected to the other of the plurality of wiring patterns formed on the substrate; wherein:
the lead of the terminal portion is formed by a plurality of metal members which contain a first material substantially the same as or lower in hardness than a second material forming the other of the wiring patterns; and
the lead of the terminal portion is electrically connected to the other of the wiring patterns through ultrasonic bonding, such that a diffusion layer is formed between the first material and the second material that ensures connection between the lead and the other of the wiring patterns without damaging the substrate.
2. The power module according to claim 1 , wherein the lead is formed by laminating a plurality of metal layers.
3. The power module according to claim 1 , wherein a hardness of the metal member of those laminated to form the lead at a side bonded to the other part of the wiring patterns is lower than a hardness of the other metal member.
4. The power module according to claim 1 , wherein:
the lead has a structure formed by laminating a member formed of copper as a main component and a member formed of aluminum as a main component;
the other part of the wiring patterns is formed of copper; and
the member formed of aluminum as the main component is electrically connected to the other part of wiring patterns through ultrasonic bonding.
5. A method of manufacturing a power module in which a semiconductor device is mounted on a substrate having a surface on which a plurality of wiring patterns are formed, and the semiconductor device is electrically connected to some of the plurality of wiring patterns, the method including a step of electrically connecting a lead of a terminal portion to the other of the plurality of wiring patterns formed on the substrate,
wherein the lead of the terminal portion is formed by a plurality of metal members which contain a first material that is the same as or lower in hardness than a second material forming the other part of the wiring patterns; and
wherein the step of electrically connecting the lead of the terminal portion is carried out in a state where one of the plurality of metal members, is in contact with the other of the wiring patterns, and the lead of the terminal portion is electrically connected to the other of the wiring patterns through ultrasonic bonding, such that a diffusion layer is formed between the first material and the second material that ensures connection between the lead and the other of the wiring patterns without damaging the substrate.
6. The method of manufacturing a power module according to claim 5 , wherein:
the lead is structured by laminating a member formed of copper as a main component and a member formed of aluminum as a main component;
the other part of wiring patterns is formed of copper; and
the member formed of aluminum as the main component is electrically connected to the other part of wiring patterns through ultrasonic bonding.