RF switches
RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.
1. An article of manufacture comprising:
an amplifier;
an antenna port;
a transmission line extending between the amplifier and the antenna port and
including
a node between the amplifier and the antenna port, and
a transmission line segment between the amplifier and the antenna port;
a first valve line joined to the transmission line at the node and including a first valve line segment disposed along the transmission line segment;
a second valve line also joined to the transmission line at the node and including a second valve line segment disposed along the transmission line segment;
a switch configured to couple and decouple the first and second valve lines to and from ground;
the first and second valve lines being arranged such that when a current is flowing in the transmission line and when the switch couples the first and second valve lines to ground, currents flowing from the node to the ground through the first and second valve line segments impedes the current flow through the transmission line segment.
2. The article of manufacture of claim 1 further comprising an antenna coupled to the antenna port.
3. The article of manufacture of claim 1 further comprising control logic configured to control the switch.
4. The article of manufacture of claim 1 wherein the switch includes a double-gate semiconductor device.
5. The article of manufacture of claim 1 wherein the article of manufacture does not include a filter between the amplifier and the antenna port to remove harmonics of a primary frequency.
6. The article of manufacture of claim 1 wherein the transmission line segment comprises a circular arc.
7. The article of manufacture of claim 1 wherein the first valve line segment is disposed in a first layer below the transmission line segment and the second valve line segment is disposed in a second layer above the transmission line segment.
8. The article of manufacture of claim 1 wherein the transmission line segment and the first and second valve line segments are all disposed in a same layer.
9. A method comprising:
transmitting an RF signal from a power amplifier to an antenna over a transmitter transmission line while impeding the RF signal on a receiver transmission line coupled between a receiver amplifier and the antenna, where impeding the RF signal on the receiver transmission line includes maintaining in an on state a valve disposed between the receiver transmission line and ground; and then switching to
receiving an RF signal from the antenna over the receiver transmission line while impeding an RF signal from the power amplifier on the transmitter transmission line.
10. The method of claim 9 wherein the valve includes a double-gate semiconductor device and maintaining the valve in the on state includes controlling the gates of the double-gate semiconductor device such that the double-gate semiconductor device conducts between a source and a drain thereof.
11. The method of claim 9 wherein impeding RF signals from the power amplifier on the transmitter transmission line includes maintaining a valve, disposed between the transmitter transmission line and ground, in an on state.
12. The method of claim 11 wherein the valve includes a double-gate semiconductor device and maintaining the valve in the on state includes controlling the gates of the double-gate semiconductor device such that the double-gate semiconductor device conducts between a source and a drain thereof.
13. The method of claim 9 wherein a CMOS device switches from the power amplifier transmitting RF signals to the antenna over the transmitter transmission line to the receiver amplifier receiving RF signals from the antenna over the receiver transmission line.
14. The method of claim 9 wherein impeding the RF signal on the receiver transmission line provides an isolation of at least 22 dB at the primary frequency of the power amplifier.