Semiconductor light-emitting device
A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element ( 1 ) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part ( 6 ) having a through-hole ( 63 ) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element ( 1 ); a translucent cover ( 7 ) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole ( 63 ); and a UV-excited phosphor ( 8 ) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part ( 6 ).
1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element for emitting ultraviolet light having a wavelength in an ultraviolet or deep ultraviolet region;
a cap part which shields the ultraviolet light, the cap part encircling the semiconductor light-emitting element;
a through-hole which is formed in a top part of the cap part and through which the ultraviolet light passes;
a translucent cover through which some or all of the ultraviolet light is transmitted, the translucent cover being disposed so as to hermetically close up the through-hole; and
a UV-excited phosphor excited by part of the ultraviolet light and emitting visible light, the UV-excited phosphor being disposed inside the cap part,
wherein the UV-excited phosphor is arranged such that the visible light passes mostly through a peripheral portion of the through-hole and the ultraviolet light passes mostly through an area of the through-hole surrounded by the peripheral portion.
2. The semiconductor light-emitting device of claim 1 , the UV-excited phosphor being disposed on at least part of the translucent cover.
3. The semiconductor light-emitting device of claim 1 , further comprising a reflective cup for reflecting ultraviolet light outputted by the semiconductor light-emitting element;
the UV-excited phosphor being disposed on at least part of the reflective cup.
4. The semiconductor light-emitting device of claim 3 , the reflective cup being configured from a material for reflecting ultraviolet light in the ultraviolet or deep ultraviolet region.
5. The semiconductor light-emitting device of claim 3 , the UV-excited phosphor disposed on the reflective cup being in contact with a material for reflecting ultraviolet light in the ultraviolet or deep ultraviolet region.
6. The semiconductor light-emitting device of claim 5 , aluminum being the material for reflecting ultraviolet light in the ultraviolet or deep ultraviolet region.
7. The semiconductor light-emitting device of claim 1 , configured so that the space encircled by the cap part and the translucent cover is airtight, the space interior being sealed by a dried gas.
8. The semiconductor light-emitting device of claim 7 , the dried gas sealed in the interior having a dew point of −10° C. or less.
9. The semiconductor light-emitting device of claim 7 , the dried gas being dry air.
10. The semiconductor light-emitting device of claim 7 , the dried gas being nitrogen.