Three-dimensional nonvolatile memory devices
A three-dimensional (3-D) nonvolatile memory device includes channel layers protruded from a substrate, word line structures configured to include word lines stacked over the substrate, first junctions and second junctions formed in the substrate between the word line structures adjacent to each other, source lines coupled to the first junctions, respectively, and well pickup lines coupled to the second junctions, respectively.
1. A three-dimensional (3-D) nonvolatile memory device, comprising:
channel layers protruded from a substrate;
word line structures configured to comprise word lines stacked over the substrate;
first junctions and second junctions formed in the substrate between the word line structures adjacent to each other;
source lines coupled to the first junctions, respectively; and
well pickup lines coupled to the second junctions, respectively.
2. The 3-D nonvolatile memory device of claim 1 , further comprising subgate lines formed between the word line structures, wherein each of the subgate lines controls a formation of a channel between the first junction and the second junction.
3. The 3-D nonvolatile memory device of claim 2 , wherein an N type channel is formed in the substrate by turning on a selected subgate line when a read operation is performed.
4. The 3-D nonvolatile memory device of claim 2 , wherein a P type channel is formed in the substrate by floating a selected subgate line when an erase operation is performed.
5. The 3-D nonvolatile memory device of claim 1 , further comprising:
at least one lower select line formed under the word line structures; and
at least one upper select line formed over the word line structures.
6. The 3-D nonvolatile memory device of claim 1 , further comprising:
at least one lower select line formed under one of the word line structures; and
at least two upper select lines formed over the word line structure.
7. The 3-D nonvolatile memory device of claim 1 , wherein channel layers included in adjacent channel layer columns, from among the channel layers, are arranged as a staggered type.
8. The 3-D nonvolatile memory device of claim 1 , wherein the word lines included in each of the word line structures substantially surround at least two columns of channel layers.
9. The 3-D nonvolatile memory device of claim 1 , wherein:
the first junctions are source regions into which an N type impurity has been doped, and
the second junctions are well regions into which a P type impurity has been doped.
10. The 3-D nonvolatile memory device of claim 1 , wherein:
each first junction and second junction is formed in a line form, and
the first junctions and the second junctions are alternately arranged between the word line structures adjacent to each other.
11. The 3-D nonvolatile memory device of claim 1 , wherein:
each first junction and second junction is formed in an island form, and
the first junctions and the second junctions are alternately arranged between the word line structures adjacent to each other.
12. The 3-D nonvolatile memory device of claim 1 , wherein each source line and well pickup line is disposed between the word line structures adjacent to each other and is protruded from the substrate.
13. The 3-D nonvolatile memory device of claim 1 , further comprising:
an even block select decoder coupled to one side of even memory blocks; and
an odd block select decoder coupled to an other side of odd memory blocks.
14. The 3-D nonvolatile memory device of claim 13 , wherein:
the even block select decoder selects the word lines of the word line structures included in the even memory blocks and supplies a signal to a selected word line, and
the odd block select decoder selects the word lines of the word line structures included in the odd memory blocks and supplies a signal to a selected word line.
15. The 3-D nonvolatile memory device of claim 1 , further comprising a decoder coupled to one side of memory blocks and configured to select the word lines of the word line structure included in a memory block and supply a signal to a selected word line.
16. The 3-D nonvolatile memory device of claim 1 , wherein the word line structures further comprise floating gates alternately stacked with the word lines.
17. The 3-D nonvolatile memory device of claim 1 , wherein the word line structures comprise:
tunnel insulating layers configured to substantially surround respective channel layers;
charge trap layers configured to substantially surround respective tunnel insulating layers; and
charge blocking layers interposed between the charge trap layers and the word lines.
18. The 3-D nonvolatile memory device of claim 1 , wherein the source lines are formed of a conductive layer.
19. The 3-D nonvolatile memory device of claim 1 , wherein the well pickup lines are formed of a conductive layer.