IP Library Granted Patent US 8,754,350
Granted Patent B2
US 8,754,350 · App. 11/527,640 · Granted Jun 17, 2014

Laser processing apparatus, exposure apparatus and exposure method

Inventors: Osamu Nakamura (Kanagawa, JP); Hiroko Yamamoto (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,754,350
App. No.
11/527,640
Granted
Jun 17, 2014
Kind
B2
Abstract

An exposure apparatus includes a stage 10 for holding a substrate 8 to be exposed; a direct writing mask 6 arranged above the substrate 8 to be exposed held by the stage 10 ; a repeated opening pattern in which a plurality of openings each having approximately the same size are arranged in a line at approximately the same interval, provided to the mask; an irradiation mechanism for irradiating with a linear laser beam 1 c along the repeated opening pattern; and a movement mechanism for moving a relative position of a laser beam which is formed in such a way that the linear laser beam formed by the laser processing mechanism passes through the plurality of openings of the opening pattern and the substrate held by the stage.

Claims (38)

1. An exposure method comprising the steps of:

providing a mask having a first opening pattern in which a first plurality of openings have approximately the same size and are arranged in a first line at approximately the first same interval and a second opening pattern in which a second plurality of openings have approximately the same size and are arranged in a second line at approximately the second same interval;

providing a substrate on a stage;

irradiating a pair of slits above the mask with a linear laser beam so that a part of the linear laser beam passes through the pair of slits;

irradiating the mask with the part of the linear laser beam so that a first plurality of exposure laser beams is formed by a first part of the first plurality of openings; and

irradiating a film over the substrate with the first plurality of exposure laser beams while moving the stage to perform exposure, thereby forming a first plurality of exposed patterns at approximately the same interval in the film at the same time,

wherein the pair of slits is configured to cover a second part of the first plurality of openings and a part of the second plurality of openings, and

wherein the first same interval between the first plurality of openings is different from the second same interval between the second plurality of openings.

2. The exposure method according to claim 1 , wherein each of shapes of the first plurality of openings is a circle, an ellipse, or a polygon.

3. The exposure method according to claim 1 , wherein one part of the linear laser beam is blocked for light shielding when performing the linear laser beam irradiation along the first opening pattern or the second opening pattern.

4. The exposure method according to claim 1 ,

wherein the mask comprises a first substrate and a metal film provided with the first plurality of openings and the second plurality of openings under the first substrate, and

wherein a side of the metal film has a shape perpendicular to a surface of the first substrate.

5. A manufacturing method of a device, comprising the steps of:

providing a mask having a first opening pattern in which a first plurality of openings have approximately the same size and are arranged in a first line at approximately the first same interval and a second opening pattern in which a second plurality of openings have approximately the same size and are arranged in a second line at approximately the second same interval;

providing a substrate on a stage;

irradiating a pair of slits above the mask with a linear laser beam so that a part of the linear laser beam passes through the pair of slits;

irradiating the mask with the part of the linear laser beam so that a first plurality of exposure laser beams is formed by a first part of the first plurality of openings; and

irradiating a film over the substrate with the first plurality of exposure laser beams while moving the stage to perform exposure, thereby forming a first plurality of exposed patterns at approximately the same interval in the film at the same time,

wherein the pair of slits is configured to cover a second part of the first plurality of openings and a part of the second plurality of openings, and

wherein the first same interval between the first plurality of openings is different from the second same interval between the second plurality of openings.

6. The manufacturing method according to claim 5 , wherein each of shapes of the first plurality of openings is a circle, an ellipse, or a polygon.

7. The manufacturing method according to claim 5 , wherein one part of the linear laser beam is blocked for light shielding when performing the linear laser beam irradiation along the first opening pattern or the second opening pattern.

8. The manufacturing method according to claim 5 ,

wherein the mask comprises a first substrate and a metal film provided with the first plurality of openings and the second plurality of openings under the first substrate, and

wherein a side of the metal film has a shape perpendicular to a surface of the first substrate.

9. A manufacturing method of a device, comprising the steps of:

providing a mask having a first opening pattern in which a first plurality of openings have approximately the same size and are arranged in a first line at approximately the first same interval and a second opening pattern in which a second plurality of openings have approximately the same size and are arranged in a second line at approximately the second same interval;

aligning the mask by an alignment marker on the mask,

providing a substrate on a stage;

irradiating the mask with a linear laser beam so that a part of the linear laser beam passes through the first plurality of openings, thereby forming a first plurality of exposure laser beams;

irradiating a film over the substrate with the first plurality of exposure laser beams while moving the stage to perform exposure, thereby forming a first plurality of exposed patterns at approximately the same interval in the film at the same time,

wherein the first same interval between the first plurality of openings is different from the second same interval between the second plurality of openings.

10. The manufacturing method according to claim 9 , wherein each of shapes of the first plurality of openings is a circle, an ellipse, or a polygon.

11. The manufacturing method according to claim 9 , wherein one part of the linear laser beam is blocked for light shielding when performing the linear laser beam irradiation along the first opening pattern or the second opening pattern.

12. The manufacturing method according to claim 9 ,

wherein the mask comprises a first substrate and a metal film provided with the first plurality of openings and the second plurality of openings under the first substrate, and

wherein a side of the metal film has a shape perpendicular to a surface of the first substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2006
From: NAKAMURA, OSAMU; YAMAMOTO, HIROKO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 018353/0843 →
Priority Claims (1)
JP 2005-281610 · Sep 28, 2005 · national
Continuity (1)
Related Publication 20070070319A1 · Mar 29, 2007