Lithographic method to apply a pattern to a substrate and lithographic apparatus
A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.
1. A lithographic method to apply a pattern to a substrate comprising:
illuminating a slit shaped area, elongated along a first direction, of a patterning device with a radiation beam to provide a patterned radiation beam;
scanning the patterning device through the radiation beam in a scan direction perpendicular to the first direction;
imaging the patterned radiation beam onto a target portion of the substrate using a projection system, comprising a plurality of lenses, a characteristic of the plurality of lenses being an image magnification component along the first direction, and an image distortion component along the scan direction;
synchronously scanning the substrate along the scan direction;
applying an adjustment to the plurality of lenses, the adjustment being configured to change the image magnification component as the substrate is scanned across a footprint of the radiation beam corresponding to the slit shaped area, a magnitude of the adjustment having at least a second order dependence on a distance between a center of the footprint and a center of the target portion; and
applying a supplementary adjustment to the plurality of lenses, the supplementary adjustment being configured to change the image distortion component as the substrate is scanned across the footprint of the radiation beam, a magnitude of the supplementary adjustment being a function of a distance between a center of the footprint and a center of the target portion.
2. The method of claim 1 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to reduce a distortion of an image field due to heating or bending of the patterning device.
3. The method of claim 2 , further comprising determining a degree of the distortion by identifying a change in position of alignment marks projected onto the substrate, the alignment marks being located at a periphery of the target portion.
4. The method of claim 2 , further comprising determining a degree of the distortion through simulation or from previous results obtained from the same patterning device.
5. The method of claim 1 , wherein the magnitude of the supplementary adjustment has at least a second order dependence on a distance between a center of the footprint and a center of the target portion.
6. The method of claim 1 , wherein the adjustment to the plurality of lenses or the supplementary adjustment to the plurality of lenses is configured to correct for a barrel-like distortion of the patterning device.
7. A lithographic method to apply a pattern to a substrate comprising:
illuminating a slit shaped area, elongated along a first direction, of a patterning device with a radiation beam to provide a patterned radiation beam;
scanning the patterning device through the radiation beam in a scan direction perpendicular to the first direction;
imaging the patterned radiation beam onto a target portion of the substrate using a projection system, comprising a plurality of lenses, a characteristic of the plurality of lenses being an image magnification component along the first direction, and an image distortion component along the scan direction;
synchronously scanning the substrate along the scan direction;
applying an adjustment to the plurality of lenses, the adjustment being configured to change the image magnification component as the substrate is scanned across a footprint of the radiation beam corresponding to the slit shaped area, a magnitude of the adjustment being a function of a distance between a center of the footprint and a center of the target portion; and
applying a supplementary adjustment to the plurality of lenses, the supplementary adjustment being configured to change the image distortion component as the substrate is scanned across the footprint of the radiation beam, a magnitude of the supplementary adjustment having at least a second order dependence on a distance between a center of the footprint and a center of the target portion.
8. The method of claim 7 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to reduce a distortion of an image field due to heating or bending of the patterning device.
9. The method of claim 8 , further comprising determining a degree of the distortion by identifying a change in position of alignment marks projected onto the substrate, the alignment marks being located at a periphery of the target portion.
10. The method of claim 8 , further comprising determining a degree of the distortion through simulation or from previous results obtained from the same patterning device.
11. The method of claim 7 , wherein the magnitude of the adjustment has at least a second order dependence on a distance between a center of the footprint and a center of the target portion.
12. The method of claim 7 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to correct for a barrel-like distortion of the patterning device.
13. A lithographic apparatus comprising:
an illumination system configured to illuminate a slit shaped area, elongated along a first direction, of a patterning device with a radiation beam to provide a patterned radiation beam;
a support structure configured to hold the patterning device and move the patterning device along a scan direction;
a substrate table configured to hold a substrate and move the substrate synchronously with the support structure along the scan direction;
a projection system, comprising a plurality of lenses, and configured to project the patterned radiation beam onto a target portion of the substrate, a characteristic of the plurality of lenses being an image magnification component along the first direction, and an image distortion component along the scan direction; and
a controller configured to:
apply an adjustment to the plurality of lenses, the adjustment being configured to adjust the image magnification component as the substrate is scanned across a footprint of the radiation beam corresponding to the slit shaped area, a magnitude of the adjustment having at least a second order dependence on a distance between a center of the footprint and a center of the target portion, and
apply a supplementary adjustment to the plurality of lenses, the supplementary adjustment being configured to adjust the image distortion component as the substrate is scanned across the footprint of the radiation beam, a magnitude of the supplementary adjustment being a function of a distance between a center of the footprint and a center of the target portion.
14. The apparatus of claim 13 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to reduce a distortion of an image field due to heating or bending of the patterning device.
15. The apparatus of claim 13 , wherein the plurality of lenses comprises off-axis lenses.
16. The apparatus of claim 13 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to correct for a barrel-like distortion of the patterning device.
17. A lithographic apparatus comprising:
an illumination system configured to illuminate a slit shaped area, elongated along a first direction, of a patterning device with a radiation beam to provide a patterned radiation beam;
a support structure configured to hold the patterning device and move the patterning device along a scan direction;
a substrate table configured to hold a substrate and move the substrate synchronously with the support structure along the scan direction;
a projection system, comprising a plurality of lenses, and configured to project the patterned radiation beam onto a target portion of the substrate, a characteristic of the plurality of lenses being an image magnification component along the first direction, and an image distortion component along the scan direction; and
a controller configured to:
apply an adjustment to the plurality of lenses, the adjustment being configured to adjust the image magnification component as the substrate is scanned across a footprint of the radiation beam corresponding to the slit shaped area, a magnitude of the adjustment being a function of a distance between a center of the footprint and a center of the target portion, and
apply a supplementary adjustment to the plurality of lenses, the supplementary adjustment being configured to adjust the image distortion component as the substrate is scanned across the footprint of the radiation beam, a magnitude of the supplementary adjustment having at least a second order dependence on a distance between a center of the footprint and a center of the target portion.
18. The apparatus of claim 17 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to reduce a distortion of an image field due to heating or bending of the patterning device.
19. The apparatus of claim 17 , wherein the plurality of lenses comprises off-axis lenses.
20. The apparatus of claim 17 , wherein the magnitude of the adjustment to the image magnification component or the magnitude of the supplementary adjustment to the image distortion component is configured to correct for a barrel-like distortion of the patterning device.