Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

1. A solid-state imaging device comprising:

a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal;

color filters associated with the pixels and having a plurality of color filter components;

microlenses configured to converge the incident light through the color filters to the photoelectric conversion elements;

a light shielding film disposed between the color filter components of the color filters; and

a nonplanarized adhesive film provided between the color filters and the light shielding film, wherein a thickness of the nonplanarized adhesive film is less than a thickness of the light shielding film.

2. The solid-state imaging device according to claim 1 , wherein the color filters are planarized.

3. The solid-state imaging device according to claim 1 , wherein the adhesive film is provided between one surface of the light shielding film and the color filters.

4. The solid-state imaging device according to claim 1 , further comprising:

an insulator film between the photoelectric conversion elements and the color filters;

wherein the color filters are embedded in the insulator film.

5. The solid-state imaging device according to claim 1 , wherein an oxide film is provided between the adhesive film and the light shielding film.

6. The solid-state imaging device according to claim 5 , wherein the oxide film is provided on one surface of the light shielding film.

7. The solid-state imaging device according to claim 1 ,

wherein the light shielding film includes

first light shielding portions formed on side portions of the color filter components, and

second light shielding portions formed at corner portions of the pixel regions,

wherein a distance from the front side of the pixel to an end surface of the second light shielding portion toward the microlens is shorter than a distance from the front side of the pixel to an end surface of the first light shielding portion toward the microlens.

8. The solid-stage imaging device according to claim 1 , wherein the nonplanarized adhesive film comprises a thermoplastic resin material.

9. The solid-state imaging device according to claim 8 , wherein the thermoplastic resin material is selected from the group including an acrylic resin, a phenolic resin, a siloxane resin, and a copolymer thereof.

10. The solid-state imaging device according to claim 1 , wherein the microlenses are disposed directly on respective ones of the color filters.

11. The method according to claim 1 , wherein the nonplanarized adhesive film comprises a thermoplastic resin material.

12. The method according to claim 11 , wherein the thermoplastic resin material is selected from the group including an acrylic resin, a phenolic resin, a siloxane resin, and a copolymer thereof.

13. The method according to claim 1 , further comprising disposing the microlenses directly on respective ones of the color filters.

14. A method of manufacturing a solid-state imaging device, the method comprising:

forming a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal;

forming a light shielding film to be provided between a plurality of color filter components of color filters;

depositing a nonplanarized adhesive film on the light shielding film, wherein a thickness of the nonplanarized adhesive film is less than a thickness of the light shielding film;

forming the color filters on the adhesive film between the light shielding films; and

forming on the color filters microlenses configured to converge the incident light through the color filters onto the photoelectric conversion elements.

15. The method according to claim 14 , wherein the color filters are planarized.

16. The method according to claim 14 , wherein the adhesive film is formed between one surface of the light shielding film and the color filters.

17. The method according to claim 14 , further comprising:

forming an insulator film between the photoelectric conversion elements and the color filters;

wherein the color filters are embedded in the insulator film.

18. The method according to claim 14 , further comprising:

forming an oxide film between the adhesive film and the light shielding film.

19. The method according to claim 18 , wherein the oxide film is formed on one surface of the light shielding film.

20. The method according to claim 14 ,

wherein forming the light shielding film includes

forming first light shielding portions on side portions of the color filter components, and

forming second light shielding portions at corner portions of the pixel regions,

wherein a distance from the front side of the pixel to an end surface of the second light shielding portion toward the microlens is shorter than a distance from the front side of the pixel to an end surface of the first light shielding portion toward the microlens.

21. An electronic apparatus comprising:

a solid-state imaging device including

a plurality of pixels, respective pixels having a photoelectric conversion element configured to convert incident light to an electric signal,

color filters associated with the pixels and having a plurality of color filter components,

microlenses configured to converge the incident light through the color filters to the photoelectric conversion elements,

a light shielding film disposed between the color filter components of the color filters, and

a nonplanarized adhesive film provided between the color filters and the light shielding film, wherein a thickness of the nonplanarized adhesive film is less than a thickness of the light shielding film; and

an optical lens configured to guide the incident light to the photoelectric conversion elements; and

a signal processing circuit configured to process the electric signal.