IP Library Granted Patent US 8,779,380
Granted Patent B2
US 8,779,380 · App. 12/995,700 · Granted Jul 15, 2014

Ion beam device

Inventors: Hiroyasu Shichi (Tokyo, JP); Shinichi Matsubara (Chofu, JP); Norihide Saho (Tsuchiura, JP); Masahiro Yamaoka (Hachioji, JP); Noriaki Arai (Hitachinaka, JP)
Assignee: Hitachi High-Technologies Corporation
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Quick Facts
Patent No.
US 8,779,380
App. No.
12/995,700
Granted
Jul 15, 2014
Kind
B2
Abstract

An ion beam device according to the present invention includes a gas field ion source ( 1 ) including an emitter tip ( 21 ) supported by an emitter base mount ( 64 ), a ionization chamber ( 15 ) including an extraction electrode ( 24 ) and being configured to surround the emitter tip ( 21 ), and a gas supply tube ( 25 ). A center axis line of the extraction electrode ( 24 ) overlaps or is parallel to a center axis line ( 14 A) of the ion irradiation light system, and a center axis line ( 66 ) passing the emitter tip ( 21 ) and the emitter base mount ( 64 ) is inclinable with respect to a center axis line of the ionization chamber ( 15 ). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Claims (10)

1. An ion beam device comprising:

a gas field ion source that generates an ion beam;

an ion irradiation light system that guides the ion beam from the gas field ion source to a sample;

a vacuum chamber that accommodates the gas field ion source and the ion irradiation light system;

a sample chamber that accommodates a sample stage for holding the sample; and

a cooling mechanism of a gas circulating method that cools the gas field ion source; wherein

wherein the cooling mechanism includes first and second compressors, and generates cooling using a first gas generated by the first compressor to cool the gas field ion source, and further uses helium gas as a second gas that is a moving cooling medium and is circulated by the second compressor to cool the gas field ion source.

2. The ion beam device according to claim 1 , wherein the gas field ion source and the vacuum chamber have a cover that reduces noise from the first and second compressors.

3. The ion beam device according to claim 1 , further comprising a mechanism that reduces noise generated by the first and second compressors which is transmitted to the ion beam device.

4. The ion beam device according to claim 1 , wherein the sample stage is a side entry type, and includes a mechanism for fine moving of the side entry type stage.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2011
From: SHICHI, HIROYASU; MATSUBARA, SHINICHI; SAHO, NORIHIDE; YAMAOKA, MASAHIRO; ARAI, NORIAKI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 025934/0068 →
Priority Claims (1)
JP 2008-148392 · Jun 5, 2008 · national
Continuity (1)
Related Publication 20110147609A1 · Jun 23, 2011