Resist composition and method of forming resist pattern
A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R 1 represents a divalent linking group; R 2 represents an arylene group which may have a substituent, and each of R 3 and R 4 independently represents an aryl group which may have a substituent; R 3 and R 4 may be mutually bonded with the sulfur atom to form a ring; R 5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.
1. A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein
the photoreactive quencher (C) contains a compound (C1) represented by general formula (c1) shown below:
wherein X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R 1 represents a divalent linking group; R 2 represents an arylene group which may have a substituent, and each of R 3 and R 4 independently represents an aryl group which may have a substituent; R 3 and R 4 may be mutually bonded with the sulfur atom to form a ring; R 5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.
2. The resist composition according to claim 1 , wherein the base component (A) is a base component (A0) that exhibits increased polarity by the action of acid.
3. A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 1 ; conducting exposure of the resist film; and developing the resist film to form a resist pattern.