Mask pattern for hole patterning and method for fabricating semiconductor device using the same
A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.
1. A method for fabricating a semiconductor device, comprising:
forming an etching target layer over a substrate including a first region and a second region;
forming a hard mask layer over the etching target layer;
forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns;
forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region;
removing the sacrificial spacer layer;
forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and
forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns as an etch mask.
2. The method according to claim 1 , wherein the forming of the second etch mask comprises:
forming a planarization layer over the first etch mask;
forming a plurality of sacrificial line patterns over the planarization layer in a direction crossing with the line patterns;
forming a spacer layer over an entire surface of a structure including the sacrificial line patterns;
selectively etching the spacer layer and forming spacer patterns on sidewalls of the sacrificial line patterns;
removing the sacrificial line patterns; and
forming the mesh type pattern and the blocking pattern by etching the planarization layer using the spacer patterns as an etch mask.
3. The method according to claim 2 ,
wherein, in the forming of the plurality of sacrificial line patterns, a plurality of sacrificial line patterns formed in the first region have a first spacing, and a plurality of sacrificial line patterns formed in the second region have a second spacing, and
wherein the second spacing is narrower than the first spacing.
4. The method according to claim 3 , wherein the spacer layer gap-fills the second spacing.
5. The method according to claim 2 , wherein the spacer layer comprises an oxide layer.
6. The method according to claim 2 , wherein the etching of the planarization layer is performed until etching is stopped at a surface of the sacrificial spacer layer.
7. The method according to claim 1 , wherein, in the forming of the second etch mask, the mesh type pattern comprises a plurality of first lines formed between the line patterns and a plurality of second lines contacting the first lines and extending in a direction crossing with the line patterns.
8. The method according to claim 1 , wherein the sacrificial spacer layer is formed as an oxide layer.
9. The method according to claim 1 , wherein the line patterns and the mesh type pattern are formed as a spin-on carbon layer.
10. The method according to claim 1 , wherein the first region comprises a cell matrix region and the second region comprises an edge region of the cell matrix region.
11. A method for fabricating a semiconductor device, comprising:
forming an etching target layer over a substrate including a first region and a second region;
forming a hard mask layer over the etching target layer;
forming a first etch mask including a plurality of first line patterns alternately disposed with a plurality of second line patterns over the hard mask layer;
forming a second etch mask over the first etch mask, wherein the second etch mask includes a plurality of third line patterns extending in a direction crossing with the first and second line patterns and a blocking pattern covering the second region;
forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and
forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns as an etch mask.
12. The method according to claim 11 , wherein the forming of the second etch mask comprises:
forming a planarization layer over the first etch mask;
forming a plurality of sacrificial line patterns over the planarization layer in a direction crossing with the line patterns;
forming a spacer layer over an entire surface of a structure including the sacrificial line patterns;
selectively etching the spacer layer and forming spacer patterns on sidewalls of the sacrificial line patterns;
removing the sacrificial line patterns; and
forming the third line patterns and the blocking pattern by etching the planarization layer using the spacer patterns as an etch mask.
13. The method according to claim 12 ,
wherein, in the forming of the plurality of sacrificial line patterns, a plurality of sacrificial line patterns formed in the first region have a first spacing and a plurality of sacrificial line patterns formed in the second region have a second spacing, and
wherein the second spacing is narrower than the first spacing.
14. The method according to claim 13 , wherein the spacer layer gap-fills the second spacing.
15. The method according to claim 12 , wherein the spacer layer comprises an oxide layer.
16. The method according to claim 11 , wherein the first line patterns, the third line patterns and the blocking pattern are each formed as a spin-on carbon layer and the second line patterns are formed as a polysilicon layer.
17. The method according to claim 11 , wherein the forming of the first etch mask including a plurality of first line patterns and a plurality of second line patterns comprises:
forming the plurality of first line patterns using a spin-on carbon layer over the hard mask layer;
forming a sacrificial spacer layer over the first line patterns;
gap-filling a polysilicon layer over the sacrificial spacer layer;
forming the second line patterns by etching back the polysilicon layer; and
removing the sacrificial spacer layer between the first line patterns and the second line patterns.
18. The method according to claim 17 , wherein the sacrificial spacer layer comprises an oxide layer.
19. The method according to claim 11 , wherein the first region comprises a cell matrix region and the second region comprises an edge region of the cell matrix region.