Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same
Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
1. A spin torque transfer memory (STTM) array, comprising:
a first load line disposed above a substrate and having only a first STTM device;
a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device;
a third load line disposed above the substrate, adjacent the second load line but not adjacent the first load line, and having only a third STTM device, the third STTM device non-co-planar with the second STTM device and co-planar with the first STTM device, wherein the first and third STTM devices are coupled by a fringing field, the fringing field a weak fringing field.
2. The STTM array of claim 1 , wherein the first and second STTM devices are perpendicular STTM devices.
3. The STTM array of claim 1 , wherein the first and second STTM devices are coupled by a fringing field, the fringing field a weak fringing field.
4. The STTM array of claim 1 , further comprising:
a fourth load line disposed above the substrate, adjacent the third load line but not adjacent the first or second load lines, and having only a fourth STTM device, the fourth STTM device non-co-planar with the third STTM device and co-planar with the second STTM device.
5. The STTM array of claim 4 , wherein the first, second, third, and fourth STTM devices are coupled to a corresponding transistor contact disposed above the substrate but below the first, second, third, and fourth STTM devices.
6. The STTM array of claim 1 , wherein each of the first and second STTM devices has a width, and the first and second STTM devices are laterally spaced from one another by an amount less than the width.
7. The STTM array of claim 6 , wherein the first and second STTM devices are offset by an amount greater than the width in a direction perpendicular to the substrate.
8. The STTM array of claim 1 , wherein each of the first and second STTM devices has a width of approximately 40 nanometers, and the first and second STTM devices are laterally spaced from one another by a distance of approximately 10 nanometers.
9. The STTM array of claim 8 , wherein the first and second STTM devices are offset by an amount of approximately 100 nanometers in a direction perpendicular to the substrate.
10. The STTM array of claim 1 , wherein each of the first and third STTM devices has a width of approximately 40 nanometers, and the first and third STTM devices are laterally spaced from one another by a distance of approximately 60 nanometers.
11. The STTM array of claim 1 , wherein each STTM device includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.
12. The STTM array of claim 11 , wherein each STTM device further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed above the free magnetic layer, and wherein an interface between the free magnetic layer and the pairs of alternating magnetic and non-magnetic layers provides a second perpendicular magnetic component for the STTM device.
13. A spin torque transfer memory (STTM) array, comprising:
a first load line disposed above a substrate and having only a first STTM device; and
a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each of the first and second STTM devices has a width, and the first and second STTM devices are laterally spaced from one another by an amount less than the width, and wherein the first and second STTM devices are offset by an amount greater than the width in a direction perpendicular to the substrate.
14. The STTM array of claim 13 , wherein the first and second STTM devices are perpendicular STTM devices.
15. The STTM array of claim 13 , wherein the first and second STTM devices are coupled by a fringing field, the fringing field a weak fringing field.
16. The STTM array of claim 13 , wherein each of the first and second STTM devices has a width of approximately 40 nanometers, and the first and second STTM devices are laterally spaced from one another by a distance of approximately 10 nanometers.
17. The STTM array of claim 16 , wherein the first and second STTM devices are offset by an amount of approximately 100 nanometers in a direction perpendicular to the substrate.
18. The STTM array of claim 13 , wherein each STTM device includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.
19. The STTM array of claim 18 , wherein each STTM device further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed above the free magnetic layer, and wherein an interface between the free magnetic layer and the pairs of alternating magnetic and non-magnetic layers provides a second perpendicular magnetic component for the STTM device.
20. A spin torque transfer memory (STTM) array, comprising:
a first load line disposed above a substrate and having only a first STTM device; and
a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each of the first and second STTM devices has a width of approximately 40 nanometers, and the first and second STTM devices are laterally spaced from one another by a distance of approximately 10 nanometers, and wherein the first and second STTM devices are offset by an amount of approximately 100 nanometers in a direction perpendicular to the substrate.
21. The STTM array of claim 20 , wherein the first and second STTM devices are perpendicular STTM devices.
22. The STTM array of claim 20 , wherein the first and second STTM devices are coupled by a fringing field, the fringing field a weak fringing field.
23. The STTM array of claim 20 , wherein each STTM device includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.
24. The STTM array of claim 23 , wherein each STTM device further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed above the free magnetic layer, and wherein an interface between the free magnetic layer and the pairs of alternating magnetic and non-magnetic layers provides a second perpendicular magnetic component for the STTM device.
25. A spin torque transfer memory (STTM) array, comprising:
a first load line disposed above a substrate and having only a first STTM device; and
a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device, wherein each STTM device includes a free magnetic layer comprising iron (Fe) atoms, and includes a dielectric layer comprising magnesium oxide (MgO) below the free magnetic layer, wherein at least a portion of the Fe atoms at an interface between the dielectric layer and the free magnetic layer are oxidized, and the interface between the dielectric layer and the free magnetic layer provides a perpendicular magnetic component for the STTM device.
26. The STTM array of claim 25 , wherein the first and second STTM devices are perpendicular STTM devices.
27. The STTM array of claim 25 , wherein the first and second STTM devices are coupled by a fringing field, the fringing field a weak fringing field.
28. The STTM array of claim 25 , wherein each STTM device further comprises one or more pairs of alternating magnetic and non-magnetic layers disposed above the free magnetic layer, and wherein an interface between the free magnetic layer and the pairs of alternating magnetic and non-magnetic layers provides a second perpendicular magnetic component for the STTM device.