Semiconductor device
A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer, a first transmission line formed on the first semiconductor substrate, the first transmission line including a signal line and a ground, a second transmission line formed on the second semiconductor substrate, the second transmission line including a signal line and a ground, a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole.
1. A semiconductor device comprising:
a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer interposed between the first semiconductor substrate and the second semiconductor substrate;
a first transmission line formed on said first semiconductor substrate, the first transmission line including a signal line and a ground;
a second transmission line formed on said second semiconductor substrate, the second transmission line including a signal line and a ground;
a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, and connected to the signal line of said first transmission line and the signal line of said second transmission line;
a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and connected to the ground of said first transmission line and the ground of said second transmission line; and
a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole, connected to the ground of said first transmission line and/or the ground of said second transmission line, and including a via layer in a shape of a band, the via layer in the shape of the band being formed so as to be opposed to said first via layer for the signal lines.
2. The semiconductor device according to claim 1 ,
wherein said second via layer is formed so as to be shallower than said first via layer for the grounds.
3. The semiconductor device according to claim 1 ,
wherein said first transmission line and said second transmission line are each a coplanar line.
4. The semiconductor device according to claim 1 ,
wherein one of said first transmission line and said second transmission line is a coplanar line, and the other is a microstrip line.
5. The semiconductor device according to claim 1 ,
wherein said first transmission line and said second transmission line are each a microstrip line.
6. The semiconductor device according to claim 1 ,
wherein for a characteristic impedance Za of said first transmission line and a characteristic impedance Zb of said second transmission line, a characteristic impedance of a via part including said via layer for the signal lines and said second via layer is √(Za×Zb).