Light emitting device and light emitting device package
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
1. A light emitting device, comprising:
a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
an electrode layer on the second conductive semiconductor layer;
an insulating layer on the second conductive semiconductor layer;
a first electrode on the first conductive semiconductor layer; and
a second electrode on the second conductive semiconductor layer and the electrode layer, wherein the electrode layer has a hole, and the second electrode contacts the second conductive semiconductor layer through the hole of the electrode layer, wherein the second electrode comprises an upper portion and a lower portion under the upper portion, wherein the lower portion has a side surface encompassed by an interior surface of the hole of the electrode layer, and wherein the insulating layer contacts at least a top surface of the second conductive semiconductor layer.
2. The light emitting device of claim 1 , wherein the insulating layer includes at least one selected from the group consisting of SiO2, SiOx, SiOxNy, Si3N4, TiO2 and Al2O3.
3. The light emitting device of claim 1 , wherein the electrode layer comprises ITO.
4. The light emitting device of claim 1 , wherein the lower portion of the second electrode has a width smaller than a width of the second electrode.
5. The light emitting device of claim 1 , wherein the insulating layer overlaps at least a portion of the electrode layer.
6. The light emitting device of claim 1 , wherein the insulating layer contacts at least a top surface of the electrode layer.
7. The light emitting device of claim 1 , wherein the insulating layer extends from the first electrode to a portion of a top surface of the second conductive semiconductor layer.
8. The light emitting device of claim 1 , wherein the second electrode comprises a multiple layer structure that includes at least two or more selected from the group consisting of Au, Al, Cr, Ag, Ti, Cu and Ni.
9. The light emitting device of claim 1 , wherein the electrode layer comprises at least one stepped portion.
10. A light emitting device, comprising:
a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
an electrode layer on the second conductive semiconductor layer;
an insulating layer on the second conductive semiconductor layer;
a first electrode on the first conductive semiconductor layer; and
a second electrode on the second conductive semiconductor layer and the electrode layer, wherein the electrode layer has a hole, and the second electrode contacts the second conductive semiconductor layer through the hole of the electrode layer, wherein the second electrode has a bottom surface that comprises a protrusion, wherein protrusion has a side surface surrounded by an inner surface of the hole of the electrode layer, and wherein the insulating layer contacts at least a top surface of the electrode layer or at least a top surface of the second conductive semiconductor layer.
11. The light emitting device of claim 10 , wherein the insulating layer includes at least one selected from the group consisting of SiO2, SiOx, SiOxNy, Si3N4, TiO2 and Al2O3.
12. The light emitting device of claim 10 , wherein the electrode layer comprises ITO.
13. The light emitting device of claim 10 , wherein the protrusion of the second electrode has a width smaller than a width of the second electrode.
14. The light emitting device of claim 10 , wherein the insulating layer overlaps at least a portion of the electrode layer.
15. The light emitting device of claim 10 , wherein the insulating layer extends from the first electrode to a portion of a top surface of the second conductive semiconductor layer.
16. The light emitting device of claim 10 , wherein the second electrode comprises a multiple layer structure that includes at least two or more selected from the group consisting of Au, Al, Cr, Ag, Ti, Cu and Ni.
17. The light emitting device of claim 10 , wherein the electrode layer comprises at least one stepped portion.
18. A light emitting device, comprising:
a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
an electrode layer on the second conductive semiconductor layer;
a first electrode on the first conductive semiconductor layer; and
a second electrode on the second conductive semiconductor layer and the electrode layer; and
an insulating layer on the light emitting structure between the first electrode and the second electrode, wherein the electrode layer has a hole, and the second electrode contacts the second conductive semiconductor layer through the hole of the electrode layer, wherein the second electrode comprises an upper portion and a lower portion under the upper portion, wherein the lower portion has a side surface encompassed by an interior surface of the hole of the electrode layer, and wherein the insulating layer contacts the second conductive semiconductor layer and the electrode layer.
19. The light emitting device according to claim 18 , wherein the insulating layer includes SiO2, and the electrode layer comprises ITO.
20. The light emitting device of claim 18 , wherein the electrode layer comprises at least one stepped portion.
21. A light emitting device, comprising:
a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
an electrode layer on the second conductive semiconductor layer;
an insulating layer on the second conductive semiconductor layer;
a first electrode on the first conductive semiconductor layer; and
a second electrode on the second conductive semiconductor layer and the electrode layer, wherein the electrode layer has a hole, and the second electrode contacts the second conductive semiconductor layer through the hole of the electrode layer, wherein the second electrode comprises an upper portion and a lower portion under the upper portion, wherein the lower portion has a side surface encompassed by an interior surface of the hole of the electrode layer, and wherein a first portion of the insulating layer extends from the first electrode to a portion of a top surface of the second conductive semiconductor layer.
22. The light emitting device according to claim 21 , wherein a second portion of the insulating layer is disposed on the second conductive semiconductor layer, and wherein the second portion of the insulating layer is provided between the second conductive semiconductor layer and the electrode layer.
23. The light emitting device of claim 21 , wherein the first portion of the insulating layer does not overlap with the hole of the electrode layer.
24. The light emitting device of claim 21 , wherein the electrode layer comprises at least one stepped portion.