Methods of making patterned structures of fluorine-containing polymeric materials and fluorine-containing polymers
Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices.
1. A method for obtaining a patterned structure comprising a fluorine-containing polymeric material comprising the steps of:
a) coating a substrate with a layer of fluorine-containing polymeric material;
b) coating the substrate from a) with a layer of photoresist material;
c) selectively exposing portions of the layer of photoresist material from step b) to radiation forming a first pattern of exposed photoresist material and a second pattern of unexposed photoresist material;
d) selectively removing either the first pattern of exposed photoresist material or the second pattern of unexposed photoresist material resulting in a residual pattern in the photoresist layer; and
e) transferring the residual pattern of the photoresist layer from step d) to the layer of fluorine-containing polymeric material,
such that a patterned structure comprising a fluorine-containing polymeric material is formed.
2. The method of claim 1 , wherein the transferring of step e) is carried out by dry etch processing.
3. The method of claim 1 , wherein the fluorine-containing polymeric material comprises a fluorine-containing polymer or fluorine-containing copolymer.
4. The method of claim 3 , wherein the fluorine-containing polymer or fluorine-containing copolymer comprises 20% or more fluorine by weight.
5. The method of claim 3 , wherein the fluorine-containing polymer or copolymer is formed at least in part from a fluorine-containing monomer comprising an active-moitety and a fluorine-containing moiety, wherein all of the fluorine in the fluorine-containing monomer is located in the fluorine-containing moiety.
6. The method of claim 5 , wherein the fluorine-containing moiety is attached to the active moiety by an alkyl spacer moiety comprising from 1 carbon to 10 carbons.
7. The method of claim 3 , wherein the fluorine-containing polymer or fluorine-containing copolymer comprises a moiety selected from benzotriazole, benzothiadiazole, thiophene-benzothiadiazole-thiophene moiety and combinations thereof.
8. The method of claim 1 , wherein the fluorine-containing material is a polymer having the following structure:
wherein R 1 and R 2 are each independently a perfluoroalkyl moiety comprising from 1 carbon to 12 carbons,
wherein n and m are each independently from 1 to 10, and
wherein k is from 2 to 1,000.
9. The method of claim 1 , wherein the fluorine-containing material is a copolymer having the following structure:
wherein R 1 , R 2 and R 3 are each independently a perfluoroalkyl moiety comprising from 1 carbon to 12 carbons,
wherein n, m and p are each independently from 1 to 10,
wherein s and t are independently from 1 to 20, and
wherein k is from 2 to 1,000.
10. A method for obtaining a patterned structure comprising a fluorine-containing polymeric material comprising the steps of:
a) coating a substrate with a layer of photoresist material;
b) selectively exposing portions of the layer of photoresist material from a) to radiation forming a first pattern of exposed photoresist material and a second pattern of unexposed photoresist material;
c) selectively removing either the first pattern of exposed photoresist material or the second pattern of unexposed photoresist material resulting in a residual pattern in the photoresist layer;
d) coating the substrate from c) with a layer of fluorine-containing polymeric material; and
e) removing the residual pattern of photoresist material and fluorine-containing polymeric material corresponding to the residual pattern of photoresist material leaving a second residual pattern of fluorine-containing polymeric material on the substrate, such that a patterned structure comprising a fluorine-containing polymeric material is formed.
11. The method of claim 10 , wherein the fluorine-containing polymeric material comprises a fluorine-containing polymer or fluorine-containing copolymer.
12. The method of claim 11 , wherein the fluorine-containing polymer or fluorine-containing copolymer comprises 20% or more fluorine by weight.
13. The method of claim 12 , wherein the fluorine-containing polymer or fluorine-containing copolymer is formed from a fluorine-containing monomer comprising an active-moitety and a fluorine-containing moiety, and wherein all of the fluorine in the fluorine-containing monomer is located in the fluorine-containing moiety.
14. The method of claim 13 , wherein the fluorine-containing moiety is attached to the active moiety by an alkyl spacer moiety comprising from 1 carbon to 10 carbons.
15. The method of claim 11 , wherein the fluorine-containing polymer or fluorine-containing copolymer comprises a moiety selected from benzotriazole, benzothiadiazole, thiophene-benzothiadiazole-thiophene moiety and combinations thereof.
16. The method of claim 10 , wherein the fluorine-containing material is a polymer having the following structure:
wherein R 1 and R 2 are each independently a perfluoroalkyl moiety comprising from 1 carbon to 12 carbons,
wherein n and m are each independently from 1 to 10, and
wherein k is from 2 to 1,000.
17. The method of claim 10 , wherein the fluorine-containing material is a copolymer having the following structure:
wherein R 40 , R 40 and R 40 are each independently a perfluoroalkyl moiety comprising from 1 carbon to 12 carbons,
wherein n, m and p are each independently from 1 to 10,
wherein s and t are independently from 1 to 20, and
wherein k is from 2 to 1,000.
18. A device comprising the patterned structure of fluorine-containing polymeric material obtained by a method comprising the steps of:
a) coating a substrate with a layer of fluorine-containing polymeric material;
b) coating the substrate from a) with a layer of photoresist material;
c) selectively exposing portions of the layer of photoresist material from step b) to radiation forming a first pattern of exposed photoresist material and a second pattern of unexposed photoresist material;
d) selectively removing either the first pattern of exposed photoresist material or the second pattern of unexposed photoresist material resulting in a residual pattern in the photoresist layer; and
e) transferring the residual pattern of the photoresist layer from step d) to the layer of fluorine-containing polymeric material, or
a′) coating a substrate with a layer of photoresist material;
b′) selectively exposing portions of the layer of photoresist material from a′) to radiation forming a first pattern of exposed photoresist material and a second pattern of unexposed photoresist material;
c′) selectively removing either the first pattern of exposed photoresist material or the second pattern of unexposed photoresist material resulting in a residual pattern in the photoresist layer;
d′) coating the substrate from c′) with a layer of fluorine-containing polymeric material; and
e′) removing the residual pattern of photoresist material and fluorine-containing polymeric material corresponding to the residual pattern of photoresist material leaving a second residual pattern of fluorine-containing polymeric material on the substrate,
such that a patterned structure comprising a fluorine-containing polymeric material is formed.
19. The device of claim 18 , wherein the device comprises three patterned fluorine-containing organic structure layers, wherein a first layer is capable of emitting red light, wherein a second layer is capable of emitting green light, and a third layer is capable of emitting blue light.
20. The device of claim 19 , wherein all three individual patterned fluorine-containing organic structure layers have the same pattern and are stacked such that the resulting composite pattern is the same as any of the individual layer patterns.