Tracking spectrum features in two dimensions for endpoint detection
A method of polishing includes polishing a substrate, receiving an identification of a selected spectral feature to monitor during polishing, measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates. At least some of the spectra of the sequence differ due to material being removed during the polishing, and the coordinates are pairs of location values and associated intensity values.
1. A method of polishing, comprising:
polishing a substrate;
receiving an identification of a selected spectral feature to monitor during polishing;
measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, at least some of the spectra of the sequence differing due to material being removed during the polishing;
determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, the coordinates being pairs of location values and associated intensity values; and
determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates.
2. The method of claim 1 , wherein the selected spectral feature comprises a peak or a valley.
3. The method of claim 2 , wherein the location value comprises a wavelength or a frequency of a maximum of the peak or a minimum of the valley.
4. The method of claim 1 , wherein the sequence of coordinates includes a starting coordinate and a current coordinate, and further comprising determining a distance from the starting coordinate to the current coordinate.
5. The method of claim 4 , further comprising halting polishing when the distance exceeds a threshold.
6. The method of claim 4 , wherein the sequence of coordinates defines a path and determining the distance comprising determining a distance along the path.
7. The method of claim 6 , wherein determining the distance along the path comprises summing distances between consecutive coordinates in the sequence of coordinates.
8. The method of claim 4 , wherein the sequence of spectra of light is reflected from a first portion of the substrate, and further comprising measuring a second sequence of spectra of light reflected from a second portion of the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the second sequence of spectra to generate a second sequence of coordinates.
9. The method of claim 8 , wherein the second sequence of coordinates includes a second starting coordinate and a second current coordinate, and further comprising determining a second distance from the second starting coordinate to the second current coordinate.
10. The method of claim 9 , wherein determining the adjustment for the polishing rate includes comparing the distance from the starting coordinate to the current coordinate to the second distance from the second starting coordinate to the second current coordinate.
11. The method of claim 4 , wherein the substrate has a second layer overlying a first layer, further comprising detecting exposure of the first layer with an in-situ monitoring system, and wherein the starting coordinate comprises a coordinate of the feature at a time that the in-situ monitoring system detects exposure of the first layer.
12. The method of claim 1 , further comprising normalizing a measured location to determine the location value and normalizing a measured intensity to generate the intensity value.
13. The method of claim 12 , further comprising measuring a maximum location and a minimum location of the spectral feature in a set-up wafer, and wherein normalizing comprises dividing the measured location by a difference between the maximum location and the minimum location.
14. The method of claim 13 , further comprising measuring a maximum intensity and a minimum intensity of the spectral feature in a set-up wafer, and wherein normalizing comprises dividing the measured intensity by a difference between the maximum intensity and the minimum intensity.
15. The method of claim 1 , wherein measuring the sequence of spectra of light comprises making a plurality of sweeps of a sensor across the substrate, and wherein determining the location value and the associated intensity value comprises averaging a plurality of spectra measured in a sweep from the plurality of sweeps.