IP Library › Granted Patent US 8,816,191
Granted Patent B2
US 8,816,191 · App. 11/555,445 · Granted Aug 26, 2014

High efficiency photovoltaic cells and manufacturing thereof

Inventor: Achyut Kumar Dutta (Sunnyvale, CA)
Assignee: Banpil Photonics, Inc.
H01L31/035281H01L31/0296H01L51/447Y02E10/549H01L51/4226H01L31/1828H01L31/18H01L31/184H01L31/0735H01L31/072H01L31/0236H01G9/2031H01L31/0304H01L31/073H01L31/1804H01L31/07
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,816,191
App. No.
11/555,445
Granted
Aug 26, 2014
Kind
B2
Abstract

Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer or micrometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators, and may be metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, commercial, residential and industrial applications.

Claims (20)

1. A photovoltaic cell, comprising:

a substrate formed from a single uniform material and having a surface with a plurality of protruding structures,

wherein the shapes of said protruding structures are selected from the group consisting of a pyramid, a truncated pyramid, a cone, and a truncated cone;

a dielectric layer disposed on the surface of the substrate,

wherein said dielectric layer isolates said protruding structures from each other;

a first electrode conformally disposed on each said protruding structure:,

a first semiconductor material conformally disposed on the first electrode of each said protruding structure;

a second semiconductor material conformally disposed on the first semiconductor material of each said protruding structure;

a semiconductor junction formed at the interface between the first semiconductor material and the second semiconductor material of each said protruding structure;

a second electrode electrically connected to the second semiconductor material of each said protruding, structure; and

a passivation layer disposed on said second semiconductor material and/or disposed on said second electrode, thereby forming a level surface.

2. The photovoltaic cell according to claim 1 , wherein said substrate is a dielectric.

3. The photovoltaic cell according to claim 1 , wherein the dimensions of said protruding structures are selected to concentrate incident solar radiation.

4. The photovoltaic cell according to claim 1 , wherein said semiconductor junction is a p-n junction.

5. The photovoltaic cell according to claim 1 , wherein said protruding structures have heights greater than their base widths.

6. The photovoltaic cell according to claim 1 , wherein said protruding structures are micro-scaled.

7. The photovoltaic cell according to claim 1 , wherein said protruding structures are nano-scaled.

8. The photovoltaic cell according to claim 1 , wherein said substrate is a third semiconductor material.

9. The photovoltaic cell according to claim 1 , wherein said substrate is a metal.

10. The photovoltaic cell according to claim 1 , wherein said protruding structures are arranged in as two-dimensional array.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2006
From: DUTTA, ACHYUT K., DR.
To: BANPIL PHOTONICS, INC.
Reel/Frame 018465/0811 →
Continuity (2)
Provisional Application 60597419 · Nov 29, 2005
Related Publication 20070204902A1 · Sep 6, 2007