Temperature controlled lid assembly for tungsten nitride deposition
Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.
1. A processing chamber for depositing a tungsten-containing material by vapor deposition, comprising:
a lid assembly attached to a chamber body, the lid assembly comprising:
a lid plate;
a showerhead;
a mixing cavity comprising an angled outer wall and an inner wall, wherein the angled outer wall has a notch formed therein;
a resistive heating element contained within the lid plate and configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C.;
a liquid channel within the lid plate and attached to a temperature regulating system;
a tungsten precursor source coupled with and in fluid communication with the mixing cavity; and
a nitrogen precursor source coupled with and in fluid communication with the mixing cavity, wherein at least one of the precursor sources is coupled with and in fluid communication with the mixing cavity through the notch.
2. The processing chamber of claim 1 , further comprising a reducing agent precursor source coupled with and in fluid communication with the lid assembly.
3. The processing chamber of claim 2 , wherein the reducing agent precursor source comprises a reducing agent selected from the group consisting of silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, and combinations thereof.
4. The processing chamber of claim 3 , wherein a first valve is disposed between the tungsten precursor source and the lid assembly, a second valve is disposed between the nitrogen precursor source and the lid assembly, and a third valve is disposed between the reducing agent precursor source and the lid assembly.
5. The processing chamber of claim 1 , wherein the temperature is within a range from about 140° C. to about 160° C.
6. The processing chamber of claim 5 , wherein the temperature is within a range from about 145° C. to about 155° C.
7. The processing chamber of claim 1 , wherein the tungsten precursor source comprises tungsten hexafluoride.
8. The processing chamber of claim 7 , wherein the nitrogen precursor source comprises ammonia.
9. A processing chamber for depositing a tungsten-containing material by vapor deposition, comprising:
a lid assembly attached to a chamber body, the lid assembly comprising:
a lid plate;
a showerhead; and
a mixing cavity with an angled wall, wherein the angled wall has a notch formed annularly therein;
a resistive heating element contained within the lid plate and configured to provide the lid plate at a temperature within a range from about 140° C. to about 160° C.;
a liquid channel within the lid plate and attached to a temperature regulating system;
a tungsten precursor source coupled with and in fluid communication with the mixing cavity through a first connection;
a nitrogen precursor source coupled with and in fluid communication with the mixing cavity; and
a reducing agent precursor source coupled with and in fluid communication with the lid assembly, wherein at least one of the precursor sources is coupled with and in fluid communication with the mixing cavity through the notch.
10. The processing chamber of claim 9 , wherein a first valve is disposed between the tungsten precursor source and the lid assembly, a second valve is disposed between the nitrogen precursor source and the lid assembly, and a third valve is disposed between the reducing agent precursor source and the lid assembly.
11. The processing chamber of claim 9 , wherein the temperature is within a range from about 145° C. to about 155° C.
12. The processing chamber of claim 9 , wherein the tungsten precursor source comprises tungsten hexafluoride.
13. The processing chamber of claim 12 , wherein the nitrogen precursor source comprises ammonia.
14. The processing chamber of claim 9 , wherein the reducing agent precursor source comprises a reducing agent selected from the group consisting of silane, hydrogen, diborane, disilane, phosphine, derivatives thereof, and combinations thereof.