Substrate processing method and substrate processing apparatus
A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.
1. A substrate processing method comprising:
a preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while evacuating the enclosed space at a preprocess flow rate;
an etching step after the preprocess step for supplying a process vapor into the enclosed space, while evacuating the enclosed space at an etching flow rate lower than the preprocess flow rate to form a film liquid on the substrate through condensation of the process vapor, and etching the substrate with the film liquid; and
a post-process step after the etching step for supplying an inert gas into the enclosed space, while evacuating the enclosed space at a post-processing flow rate higher than the etching flow rate.
2. The substrate processing method according to claim 1 , wherein the etching step includes at least one of the following steps:
(a) an exhausting step for supplying the process vapor into the enclosed space, while evacuating the enclosed space at the etching flow rate; and
(b) a step for supplying the process vapor into the enclosed space, while evacuating the enclosed space at the etching flow rate with an exhaust device for evacuating the enclosed space being stopped.
3. The substrate processing method according to claim 1 , further comprising a replacing step for supplying a process vapor into the enclosed space, while evacuating the enclosed space by means of an exhaust device at a replacing flow rate higher than the etching flow rate,
wherein the replacing step is conducted after the preprocess step and before the etching step.
4. The substrate processing method according to claim 3 , further comprising a repetition step which alternates the replacing step and etching step for a plurality of times before the post-process step.
5. The substrate processing method according to claim 1 ,
wherein the enclosed space contains a cover having a communication hole through which fluids flow between the inside and outside of the cover, and
wherein the etching step includes a step for supplying a process vapor into the inside of the cover in a state such that the substrate is covered by the cover, while evacuating the enclosed space through the communication hole.
6. The substrate processing method according to claim 1 , wherein the etching step includes a step for supplying a process vapor into the enclosed space, the enclosed space having a circular protection wall surrounding the substrate while evacuating the enclosed space.
7. The substrate processing method according to claim 1 , wherein the substrate is a substrate having a nitride film formed thereon.