Integration of optoelectronics with waveguides using interposer layer
View Patent ↗Improved integration of optoelectronic devices is provided by a spacer layer laterally sandwiched between distinct regions that are monolithically fabricated onto the same substrate (e.g., by selective epitaxy). An optical waveguide in one of the regions can optically couple to an optoelectronic device in another of the regions through the spacer layer, thereby providing a monolithically integrated form of butt-coupling. Preferably, the spacer layer thickness is less than about 50 nm, and is more preferably less than about 20 nm, to reduce optical loss. The spacer layer is preferably electrically insulating, to prevent shorting of devices grown by selective epitaxy.
1. Apparatus comprising:
a substrate;
a first region monolithically fabricated on the substrate and including a first optoelectronic device;
a second region monolithically fabricated on the substrate in lateral proximity to the first region and including a first optical waveguide; and
a first spacer layer laterally sandwiched between the first region and the second region;
wherein the first optical waveguide is optically coupled to the first optoelectronic device through the first spacer layer.
2. The apparatus of claim 1 , wherein the first spacer layer is electrically insulating.
3. The apparatus of claim 1 , wherein the first region and the second region are of different material systems.
4. The apparatus of claim 3 , wherein the first region includes one or more optoelectronic devices fabricated in a material system selected from the group consisting of Si, Ge, SiGe, III-V alloys and II-VI alloys.
5. The apparatus of claim 3 , wherein the second region includes one or more optical waveguides having silicon cores.
6. The apparatus of claim 1 , wherein a thickness of the first spacer layer separating the first region from the second region is less than about 50 nm.
7. The apparatus of claim 1 , wherein the substrate is a silicon on insulator substrate.
8. The apparatus of claim 1 , wherein the first optoelectronic device is a device selected from the group consisting of semiconductor laser, light emitting diode, optical modulator and optical detector.
9. The apparatus of claim 1 , further comprising:
a third region monolithically fabricated on the substrate in lateral proximity to the first region and including a second optical waveguide;
a second spacer layer laterally sandwiched between the first region and the third region;
wherein the second optical waveguide is optically coupled to the first region through the second spacer layer.
10. The apparatus of claim 9 , wherein optical radiation can propagate between the first optical waveguide and the second optical waveguide through one or more optoelectronic devices in the first region.
11. A method of fabricating an optoelectronic integrated circuit, the method comprising:
providing a substrate having a vertical layer structure suitable for fabrication of optical waveguides;
etching one or more trenches having side surfaces and bottom surfaces in the substrate to expose one or more waveguide endfaces on the side surfaces;
depositing a first spacer layer of first spacer material to cover the side surfaces and the bottom surfaces;
depositing a second spacer layer of second spacer material to cover the first spacer layer on the side surfaces and the bottom surfaces;
performing an anisotropic etch of the second spacer layer to substantially remove the second spacer layer from the bottom surfaces, while substantially not affecting the second spacer layer on the side surfaces;
performing a first selective etch that substantially removes the first spacer material while substantially not affecting the second spacer material to remove the first spacer layer from the bottom surfaces;
performing a second selective etch that substantially removes the second spacer material while substantially not affecting the first spacer material to remove the second spacer layer from the side surfaces; and
performing selective epitaxy on the bottom surfaces of the one or more trenches to grow one or more optoelectronic device regions.
12. The method of claim 11 , wherein the substrate is a silicon on insulator substrate.
13. The method of claim 11 , wherein the first spacer material comprises silicon oxide and the second spacer material comprises silicon nitride.
14. The method of claim 11 , wherein the first spacer material is selected such that growth does not occur on the first spacer material during the selective epitaxy.
15. The method of claim 11 , wherein the selective epitaxy includes a step of growing a buffer structure for lattice matching the optoelectronic device regions to the substrate prior to growing the optoelectronic device regions, and wherein a depth of the trenches is selected to provide vertical alignment of waveguides outside the trenches to the optoelectronic device regions disposed on the buffer structures.
16. The method of claim 11 , further comprising selecting a thickness of the first spacer layer such that optical coupling between one or more optoelectronic devices in the optoelectronic device regions and one or more optical waveguides outside the optoelectronic device regions is provided.
17. The method of claim 16 , wherein the thickness of the first spacer layer is less than about 50 nm.