Method of operating memory controller, memory controller, memory device and memory system
A method of operating a memory controller, a memory controller, a memory device and a memory system are provided. The method includes reading first data from a nonvolatile memory device using a first read voltage, the first data includes a uncorrectable error bit, reading second data from a nonvolatile memory device using a second read voltage different from the first read voltage, the second data includes an correctable error bit, and reprogramming the nonvolatile memory device according to the comparison result of the first read voltage and the second read voltage.
1. A method of operating a memory controller, comprising:
reading, as first data, data stored in a nonvolatile memory do vice using a first read voltage, the first data including an uncorrectable error bit;
reading, as second data, the data stored in the nonvolatile memory device using a second read voltage different from the first read voltage, the second data including a correctable error bit; and
reprogramming the stored data in the nonvolatile memory device based on a comparison result of the first read voltage and the second read voltage,
wherein the first data is stored in a first block including a first page corresponding to a first page address Of the nonvolatile memory device, the second data is stored in a second block including a second page corresponding to a second page address of the nonvolatile memory device, and the first page address and the second page address are a same page address.
2. The method of claim 1 , wherein t le second read voltage is smaller than the first read voltage.
3. The method of claim 1 , wherein the reprogramming comprises reprogramming the nonvolatile memory device when a difference between the first read voltage and the second read voltage is greater than a reference value.
4. The method of claim 1 , wherein the reprogramming comprises reprogramming the first page.
5. The method of claim 1 , wherein the reprogramming comprises reprogramming the first block.
6. The method of claim 1 , wherein the nonvolatile memory device further comprises a third block having a same number of erase operations with that of the first block, and the reprogramming comprises reprogramming the first block and the third block.
7. The method of claim 1 , wherein the nonvolatile memory device further comprises a fourth block having a same number of erase operations with that of the first block, and the reprogramming comprises reprogramming the first block and the fourth block.
8. The method of claim 1 , wherein consecutive data is consecutively stored in the first block and at least one fifth block, and the reprogramming comprises reprogramming the first. block and the at least one fifth block.
9. The method of claim 1 , further comprising:
determining the comparison result by performing a comparison operation, the comparison operation being based on the first read voltage, the second read voltage, and a reference value, the comparison result indicating whether a difference between the first read voltage and the second read voltage exceeds the reference value,
wherein the reprogramming includes reprogramming the stored data in the nonvolatile memory device when the comparison result indicates the difference exceeds the reference value.