Method of manufacturing strained source/drain structures
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides a processing for forming improved lightly doped source/drain features and source/drain features in the semiconductor device. Semiconductor device with the improved lightly doped source/drain features and source/drain features may prevent or reduce defects and achieve high strain effect. In at least one embodiment, the lightly doped source/drain features and source/drain features comprises the same semiconductor material formed by epitaxial growth.
1. A device, comprising: a substrate; a gate structure over the substrate and defining a channel region in the substrate; and epitaxial (epi) strainers in the substrate, interposed by the channel region, wherein at least one of the epi strainers comprises: a lightly doped source/drain (LDD) feature, wherein the LDD feature is proximate to an edge of the gate structure; a source/drain (S/D) feature adjacent to the LDD portion; and a buffer layer under the epi strainers, wherein the LDD feature separates the gate structure from the buffer layer, wherein the buffer layer comprises silicon germanium (SiGe), wherein the epi strainers comprise silicon germanium (SiGe) with Ge equal to or greater than about 35 atomic ratio (at %).
2. The device of claim 1 , wherein the epi strainers comprise a material different from the substrate.
3. The device of claim 1 , wherein the epi strainers comprise a composition of silicon and an additional element, the additional element being germanium, tin, carbon, or combinations thereof.
4. The device of claim 1 , wherein the substrate has a trench in which the at least one of the epi strainers is formed, the buffer layer lining a bottom surface and a sidewall surface of the trench, the buffer layer at least partially surrounding the S/D feature.
5. The device of claim 4 , wherein the buffer layer comprises a composition of silicon and an additional element, the additional element being germanium, tin, carbon, or combinations thereof.
6. The device of claim 4 , wherein the buffer layer comprises a thickness ranging from about 50 Angstroms to about 250 Angstroms.
7. The device of claim 4 , wherein a ratio of a thickness of the epi strainers over a thickness of the buffer layer is ranging from about 1 to about 4.
8. The device of claim 1 , further comprising:
a contact feature over the epi strainers.
9. The device of claim 8 , wherein the contact feature comprises silicon germanium (SiGe) with Ge equal to or less than about 20 atomic ratio (at %).
10. A device, comprising: a substrate having trenches; a gate structure over the substrate and defining a channel region in the substrate; gate spacers overlying opposite sidewalls of the gate structure; lightly doped source/drain (LDD) features in the trenches of the substrate and interposed by the channel region; and source/drain (S/D) features in the trenches of the substrate, interposed by the channel region, and adjacent to the LDD features, wherein materials of the S/D features and the LDD features are the same and include dopant with the same doping concentration; a contact feature over the S/D features; and a buffer layer lining bottom surfaces and sidewall surfaces of the trenches, the buffer layer at least partially surrounding the S/D features, wherein the LDD features separate the buffer layer from the gate structure, wherein the buffer layer comprises silicon germanium (SiGe), wherein the buffer layer includes a same dopant as in the S/D features and the LDD features, and a doping concentration of a dopant in the buffer layer is lower than a doping concentration in the S/D features and a doping concentration in the LDD features.
11. The device of claim 10 , wherein the dopant is boron and the doping concentration is ranging from about 1E18 atoms/cm 3 to about 1E21 atoms/cm 3 .
12. The device of claim 10 , wherein the S/D features and the contact feature comprise silicon germanium (SiGe) with different atomic ratios (at %) of Ge therein.
13. The device of claim 10 , wherein the S/D features comprise silicon germanium (SiGe) with a lower atomic ratio (at %) of Ge in the buffer layer than in the S/D features.
14. The device of claim 10 , wherein the buffer layer has a thickness ranging from about 50 Angstroms to about 250 Angstroms.
15. A device, comprising: a substrate having a trench and a channel region; a gate structure over the channel region; a spacer on a sidewall of the gate structure; a strainer filling the trench and extending toward the channel region along a bottom surface of the spacer; and a buffer layer lining a bottom surface and a sidewall surface of the trench, the buffer layer at least partially surrounding the strainer, wherein the strainer separates the buffer layer from the spacer; wherein the buffer layer comprises silicon germanium (SiGe), wherein the strainer comprises a composition of silicon and an additional element, and an atomic ratio of the additional element in the buffer layer is lower than in the strainer.
16. The device of claim 15 , further comprising:
a contact feature over and in direct contact with the strainer, the contact feature comprising a composition of silicon and the additional element, and an atomic ratio of the additional element in the contact feature is lower than in the strainer.
17. The device of claim 1 , wherein the LDD feature contacts the edge of the gate structure.
18. The device claim of 15 , wherein the strainer filling comprises silicon germanium (SiGe) with Ge equal to or greater than about 35 atomic ratio (at %).
19. The device of claim 15 , wherein the strainer filling comprise a composition of silicon and an additional element, wherein the additional element is germanium, tin, carbon, or combinations thereof.
20. The device of claim 16 , wherein the contact feature has a dopant concentration ranging from about 1E18 atoms/cm 3 to about 1E21 atoms/cm 3 .