IP Library Granted Patent US 8,840,861
Granted Patent B2
US 8,840,861 · App. 13/578,820 · Granted Sep 23, 2014

Crucible for photovoltaics

Inventors: Rolf Wagner (Selb, DE); Manuel Matussek (Marktredwitz, DE)
Assignee: H. C. Starck GmbH
C04B41/5066C23C24/082C04B41/009C30B28/04C04B41/87C30B15/10C23C8/24
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Quick Facts
Patent No.
US 8,840,861
App. No.
13/578,820
Granted
Sep 23, 2014
Kind
B2
Abstract

A method for producing a workpiece comprising a layer of an additive-free silicon nitride includes providing a base body of the workpiece. A layer of a slip comprising a silicon powder is applied to an inside of the base body so as to obtain a coated base body. The coated base body is subjected to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

Claims (28)

1. A method for producing a workpiece comprising a layer of an additive-free silicon nitride, the method comprising:

providing a base body of the workpiece comprising a nitride-bonded silicon carbide;

applying a layer of a slip comprising a silicon powder to an inside of the base body so as to obtain a coated base body; and

subjecting the coated base body to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

2. The method as recited in claim 1 , wherein the silicon nitride powder used for applying the layer has a particle size distribution of at least one of D 98 ≦10 μm and D 50 ≦2.5 μm, as measured with a Coulter Beckmann 13320 granulometer in accordance with a standard ISO 13320.

3. The method as recited in claim 1 , wherein the slip further comprises an inorganic fraction comprising the silicon powder.

4. The method as recited in claim 1 , wherein the silicon powder used for applying the layer has a particle size distribution of at least one of D 98 ≦20 μm and D 50 ≦4 μm, as measured with a Coulter Beckmann 13320 granulometer in accordance with a standard ISO 13320.

5. The method as recited in claim 1 , wherein the layer of the slip comprising the silicon powder is applied by at least one of a slip casting, a spraying process, and a brushing process.

6. The method as recited in claim 1 , wherein the reactive firing of the slip forms an insulating interlayer, the insulating interlayer having a thickness of from 0.2 to 2.0 mm after the reactive firing.

7. A workpiece comprising a layer of an additive-free silicon nitride, the workpiece being produced by a method comprising:

providing a base body of the workpiece comprising a nitride-bonded silicon carbide;

applying a layer of a slip comprising a silicon powder to an inside of the base body so as to obtain a coated base body; and

subjecting the coated base body to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

8. A component produced from the workpiece as recited in claim 7 .

9. A method for producing a workpiece comprising a layer of an additive-free silicon nitride, the method comprising:

providing a base body of the workpiece comprising a material selected from the group consisting of a carbon fibre-based carbon (CFC), and a mixture a graphite and the carbon fibre-based carbon (CFC);

applying a layer of a slip comprising a silicon powder and a silicon nitride powder to an inside of the base body so as to obtain a coated base body; and

subjecting the coated base body to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

10. The method as recited in claim 9 , wherein the slip comprises 55 to 90 wt.-% silicon nitride and 10 to 45 wt.-% silicon, based on the sum of silicon and silicon nitride.

11. The method as recited in claim 9 , wherein the silicon nitride powder used for applying the layer has a particle size distribution of at least one of D 98 ≦10 μm and D 50 ≦2.5 μm, as measured with a Coulter Beckmann 13320 granulometer in accordance with a standard ISO 13320.

12. The method as recited in claim 9 , wherein the silicon powder used for applying the layer has a particle size distribution of at least one of D 98 ≦20 μm and D 50 ≦4 μm, as measured with a Coulter Beckmann 13320 granulometer in accordance with a standard ISO 13320.

13. The method as recited in claim 9 , wherein the layer of the slip comprising the silicon powder is applied by at least one of a slip casting, a spraying process, and a brushing process.

14. The method as recited in claim 9 , wherein the reactive firing of the slip forms an insulating interlayer, the insulating interlayer having a thickness of from 0.2 to 2.0 mm after the reactive firing.

15. A workpiece comprising a layer of an additive-free silicon nitride, the workpiece being produced by a method comprising:

providing a base body of the workpiece comprising a material selected from the group consisting of a carbon fibre-based carbon (CFC), and a mixture a graphite and the carbon fibre-based carbon (CFC);

applying a layer of a slip comprising a silicon powder and a silicon nitride powder to an inside of the base body so as to obtain a coated base body; and

subjecting the coated base body to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride.

16. A component produced from the workpiece as recited in claim 15 .

Assignments (4)
MERGER Recorded Nov 6, 2023
From: KYOCERA FINECERAMICS PRECISION GMBH
To: KYOCERA FINECERAMICS EUROPE GMBH
Reel/Frame 066368/0495 →
CHANGE OF NAME Recorded Jul 10, 2019
From: H.C. STARCK CERAMICS GMBH
To: KYOCERA FINECERAMICS PRECISION GMBH
Reel/Frame 049708/0618 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2018
From: H.C. STARCK GMBH
To: H.C. STARCK CERAMICS GMBH
Reel/Frame 046772/0455 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 14, 2012
From: WAGNER, ROLF, MR.; MATUSSEK, MANUEL, MR.
To: H.C. STARCK GMBH
Reel/Frame 028779/0013 →
Priority Claims (1)
DE 10 2010 008 089 · Feb 15, 2010 · national
Continuity (1)
Related Publication 20120315208A1 · Dec 13, 2012