Substrate including oxide thin film transistor, method for fabricating the same, and driving circuit for liquid crystal display device using the same

1. A substrate divided into a pixel region and a driving circuit region including a plurality of thin film transistors (TFTs) comprising:

a gate electrode formed on the substrate;

a gate insulating layer formed on the entire surface of the substrate including the gate electrode;

an active pattern formed on the gate insulating layer and made of an oxide semiconductor;

an etch stop pattern formed on the active pattern in an overlapping manner; and

source and drain electrodes formed to be spaced apart from each other on the gate insulating layer having the etch stop pattern,

wherein one of the plurality of TFTs on the driving circuit region has a more extended overlap region between the source and drain electrodes and the etch stop pattern than the other TFTs.

2. A driving circuit for a liquid crystal display device formed on a substrate, the driving circuit comprising:

a first transistor charging a first node when diode-connected and turned on by a start signal;

a second transistor charging a second node with a high potential driving voltage according to an inverting clock signal;

a third transistor turned on according to the charging of the second node to discharge the first node;

a fourth transistor turned on by a reset signal to discharge the first node and allowing the second node to be charged;

a fifth transistor turned on according to the charging of the first node to discharge the second node;

a sixth transistor discharging the second node;

a seventh transistor turned on by the high voltage charged in the first node to allow a non-inverting clock signal to pass therethrough so as to be output as an output signal; and

an eighth transistor turned on by the high voltage charged in the second node to induce the output signal to be dropped to have a low potential,

wherein an initial threshold voltage of at least one of the first to eighth transistors is positive-shifted to have a predetermined level, and

wherein the third transistor has a more extended overlap region between source and drain electrodes and an etch stop pattern than each of the other TFTs.

3. The driving circuit of claim 2 , wherein the third transistor has a more extended overlap region with an active pattern and the etch stop pattern than that of each of the first, second, and fourth to eighth transistors.

4. A substrate divided into a pixel region and a driving circuit region including a plurality of thin film transistors (TFTs) comprising:

a gate electrode formed on the substrate;

a gate insulating layer formed on the entire surface of the substrate including the gate electrode;

an active pattern formed on the gate insulating layer and made of an oxide semiconductor;

an etch stop pattern formed on the active pattern in an overlapping manner; and

source and drain electrodes formed on the gate insulating layer having the etch stop pattern to be spaced apart from each other,

wherein one of the plurality of TFTs has more extended areas of the active pattern and the etch stop pattern than the other TFTs.

5. A method for fabricating a substrate divided into a pixel region and a driving circuit region including a plurality of thin film transistors (TFTs), the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the entire surface of the substrate including the gate electrode;

forming an active pattern made of an oxide semiconductor on the gate insulating layer above the gate electrode;

forming an etch stop pattern on the active pattern in an overlapping manner; and

forming source and drain electrodes to be spaced apart from each other, on the etch stop pattern and the gate insulating layer,

wherein one of the plurality of TFTs is formed to have a more extended overlap region between the source and drain electrodes and the etch stop pattern than the other TFTs.

6. A method for fabricating a substrate divided into a pixel region and a driving circuit region including a plurality of thin film transistors (TFTs), the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the entire surface of the substrate including the gate electrode;

forming an active pattern made of an oxide semiconductor on the gate insulating layer above the gate electrode;

forming an etch stop pattern on the active pattern in an overlapping manner; and

forming source and drain electrodes to be spaced apart from each other, on the etch stop pattern and the gate insulating layer,

wherein one of the plurality of TFTs has more extended areas of the etch stop pattern and the active pattern than the other TFTs.