Power storage device and method for manufacturing the same
View Patent ↗To provide a method for forming an electrode for a storage battery, including the step of: forming a metal layer which is over a current collector and has an edge portion; and forming a crystalline silicon layer, which is over the etched metal layer and includes a silicon whisker, as an active material layer by a low pressure chemical vapor deposition (LPCVD) method in which heating is performed with the use of a deposition gas containing silicon.
1. A method for manufacturing a power storage device, comprising the steps of:
forming a metal layer over a current collector, wherein the current collector includes a first metal element;
etching the metal layer to form a patterned metal layer over a first portion of the current collector so that a second portion of the current collector is exposed; and
forming an active material layer over the current collector, wherein the active material layer includes a silicon layer over the first portion and the second portion, and includes a plurality of silicon whiskers over the first portion,
wherein the plurality of silicon whiskers formed over the first portion is provided more densely than those formed over the second portion,
wherein the plurality of silicon whiskers are positioned over the silicon layer, and
wherein the metal layer includes a second metal element different from the first metal element.
2. The method for manufacturing a power storage device according to claim 1 , wherein the plurality of silicon whiskers formed on an edge portion of the patterned metal layer is provided more densely than those formed on a flat portion thereof.
3. The method for manufacturing a power storage device according to claim 1 , wherein the second metal element is an element which constitutes a silicide.
4. The method for manufacturing a power storage device according to claim 1 , wherein the second metal element is a metal element selected from the group consisting of zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, and nickel.
5. The method for manufacturing a power storage device according to claim 1 , wherein the active material layer is formed by a low pressure chemical vapor deposition method with use of a deposition gas containing silicon.
6. The method for manufacturing a power storage device according to claim 1 ,
wherein a mixed layer is formed between the patterned metal layer and the silicon layer after forming the active material layer, and
wherein the mixed layer comprises the second metal element and silicon.
7. The method for manufacturing a power storage device according to claim 1 , wherein the plurality of silicon whiskers is formed over the first portion only.
8. A method for manufacturing a power storage device, comprising the steps of:
forming a metal layer over a current collector, wherein the current collector includes a first metal element;
etching the metal layer to form a patterned metal layer having a rectangular shape over a first portion of the current collector so that a second portion of the current collector is exposed; and
forming an active material layer over the current collector,
wherein the active material layer includes a silicon layer over the first portion and the second portion, and includes a plurality of silicon whiskers over the first portion,
wherein the plurality of silicon whiskers formed over the first portion is provided more densely than those formed over the second portion,
wherein the plurality of silicon whiskers are positioned over the silicon layer, and
wherein the metal layer includes a second metal element different from the first metal element.
9. The method for manufacturing a power storage device according to claim 8 , wherein the plurality of silicon whiskers formed on an edge portion of the patterned metal layer is provided more densely than those formed on a flat portion thereof.
10. The method for manufacturing a power storage device according to claim 8 , wherein the second metal element is an element which constitutes a silicide.
11. The method for manufacturing a power storage device according to claim 8 , wherein the second metal element is a metal element selected from the group consisting of zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt, and nickel.
12. The method for manufacturing a power storage device according to claim 8 , wherein the active material layer is formed by a low pressure chemical vapor deposition method with use of a deposition gas containing silicon.
13. The method for manufacturing a power storage device according to claim 8 ,
wherein a mixed layer is formed between the patterned metal layer and the silicon layer after forming the active material layer, and
wherein the mixed layer comprises the second metal element and silicon.
14. The method for manufacturing a power storage device according to claim 6 , wherein the mixed layer comprises a silicide.
15. The method for manufacturing a power storage device according to claim 13 , wherein the mixed layer comprises a silicide.
16. The method for manufacturing a power storage device according to claim 6 , wherein the mixed layer comprises an alloy of the second metal element and silicon.
17. The method for manufacturing a power storage device according to claim 13 , wherein the mixed layer comprises an alloy of the second metal element and silicon.
18. The method for manufacturing a power storage device according to claim 8 , wherein the plurality of silicon whiskers is formed over the first portion only.
19. The method for manufacturing a power storage device according to claim 6 , wherein a metal oxide layer is formed between the mixed layer and the silicon layer after forming the active material layer.
20. The method for manufacturing a power storage device according to claim 13 , wherein a metal oxide layer is formed between the mixed layer and the silicon layer after forming the active material layer.