Image and light sensor chip packages
An image or light sensor chip package includes an image or light sensor chip having a non-photosensitive area and a photosensitive area surrounded by the non-photosensitive area. In the photosensitive area, there are light sensors, a layer of optical or color filter array over the light sensors and microlenses over the layer of optical or color filter array. In the non-photosensitive area, there are an adhesive polymer layer and multiple metal structures having a portion in the adhesive polymer layer. A transparent substrate is formed on a top surface of the adhesive polymer layer and over the microlenses. The image or light sensor chip package also includes wirebonded wires or a flexible substrate bonded with the metal structures of the image or light sensor chip.
1. A light sensor chip comprising:
a semiconductor substrate;
multiple transistors each including a diffusion or doped area in said semiconductor substrate and a gate over a top surface of said semiconductor substrate;
a first dielectric layer over said top surface of said semiconductor substrate;
an interconnection layer over said first dielectric layer;
a second dielectric layer over said interconnection layer and over said first dielectric layer;
a metal trace over said second dielectric layer, wherein said metal trace has a width smaller than 1 micrometer;
an insulating layer on a first region of said metal trace, over said interconnection layer and over said first and second dielectric layers, wherein an opening in said insulating layer is over a second region of said metal trace, and said second region is at a bottom of said opening;
a metal layer on said second region of said metal trace, wherein said metal layer is connected to said second region of said metal trace through said opening, wherein said metal layer has a thickness between 3 and 100 micrometers and a width between 5 and 100 micrometers;
a polymer layer under a bottom surface of said semiconductor substrate; and
a transparent substrate on a bottom surface of said polymer layer, under said bottom surface of said semiconductor substrate and under multiple transistors, wherein an air space is between said semiconductor substrate and said transparent substrate and under said multiple transistors, wherein a top surface of said transparent substrate provides a bottom wall of said air space, and said polymer layer provides a sidewall of said air space.
2. The light sensor chip of claim 1 , further comprising a microelectromechanical system in said air space and under said multiple transistors.
3. The light sensor chip of claim 1 , further comprising a layer of filter array and multiple microlenses in said air space and under said multiple transistors.
4. The light sensor chip of claim 1 , wherein said multiple transistors compose a complementary-metal-oxide-semiconductor (CMOS) device or a charge coupled device (CCD).
5. The light sensor chip of claim 1 , wherein said semiconductor substrate has a thickness between 3 and 50 micrometers.
6. The light sensor chip of claim 1 , wherein said metal layer includes a copper layer or a gold layer.
7. The light sensor chip of claim 1 , further comprising an etching stop in said semiconductor substrate, wherein said etching stop has a first region substantially coplanar with said top surface of said semiconductor substrate and a second region substantially coplanar with said bottom surface of said semiconductor substrate.