Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. A heat radiator is disposed on the heat conductive member. The heat conductive member thermally connecting the semiconductor element to the heat radiator reduces the risk that electromagnetic noise may be emitted from or may be incident on the semiconductor element.
1. A semiconductor device comprising:
a substrate;
an electrode portion disposed over the substrate and having an opening region;
a semiconductor element disposed in the opening region over the substrate;
a heat conductive member composed of a solder material and covering the semiconductor element, the heat conductive member which has a series of side walls surrounding the semiconductor element along the electrode portion and being connected to the electrode portion; and
a heat radiator disposed over the heat conductive member; wherein
the side walls of the heat conductive member which are opposite to adjacent side surfaces of the semiconductor element come in contact with each other.
2. The semiconductor device according to claim 1 , wherein the heat conductive member is disposed along an upper surface and the side surfaces of the semiconductor element.
3. The semiconductor device according to claim 1 , wherein the electrode portion is at a ground potential.
4. The semiconductor device according to claim 1 , further comprising:
a resin layer disposed between the substrate and the semiconductor element.
5. The semiconductor device according to claim 1 , further comprising:
a resin layer disposed between the substrate and the semiconductor element, wherein
the heat conductive member has an opening that communicates with the resin layer.
6. The semiconductor device according to claim 1 , wherein
the heat radiator has a recessed portion that accommodates the heat conductive member, and
the heat conductive member is disposed along an inner surface of the recessed portion.
7. The semiconductor device according to claim 1 , further comprising:
a first bonding layer disposed between an upper surface of the semiconductor element and the heat conductive member; and
a second bonding layer disposed between an upper surface of the heat conductive member and the heat radiator.
8. The semiconductor device according to claim 1 , wherein a part of the side walls of the heat conductive member contacts with a side surface of the semiconductor element.
9. The semiconductor device according to claim 4 , wherein a part of the side walls of the heat conductive member contacts with a side surface of the resin layer.
10. The semiconductor device according to claim 1 , wherein
the heat radiator is a tabular member, and outer surfaces of the side walls of the heat conductive member are exposed.
11. The semiconductor device according to claim 6 , wherein
the inner surface includes a bottom surface and side surfaces of the recessed portion of the heat radiator,
the inner surface is covered with a third bonding layer, and
the third bonding layer contacts with an upper surface of the heat conductive member and the outer surfaces of the side walls of the heat conductive member.
12. A semiconductor device comprising:
a substrate;
an electrode portion disposed over the substrate;
a semiconductor element disposed over the substrate;
a heat conductive member composed of a solder material, the heat conductive member covering the semiconductor element and being connected to the electrode portion; and
a heat radiator disposed over the heat conductive member; wherein
a part of side walls of the heat conductive member contacts with a side surface of the semiconductor element.
13. A semiconductor device according to claim 12 , wherein the electrode portion surrounds the semiconductor element.