Perpendicular magnetization storage element and storage device
A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.
1. A storage element comprising:
a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance;
a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer;
an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer; and
a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers, wherein a first oxide layer adjacent to the storage layer includes magnesium oxide, and a different second oxide layer adjacent the first oxide layer includes at least one of tantalum oxide and aluminum oxide,
wherein the storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.
2. The storage element according to claim 1 ,
wherein the cap layer includes a layer of silicon oxide, magnesium oxide, tantalum oxide, aluminum oxide, cobalt oxide, ferrite, titanium oxide, chromium oxide, strontium titanate, lanthanum aluminum oxide, zinc oxide, or a mixture containing at least one of these oxides.
3. The storage element according to claim 1 ,
wherein the storage layer includes a ferromagnetic layer material containing Co—Fe—B.
4. A storage device comprising:
a storage element which retains information by a magnetization state of a magnetic substance; and
two types of wires intersecting each other, the storage element including a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer; an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer; and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers, wherein a first oxide layer adjacent to the storage layer includes magnesium oxide, and a different second oxide layer adjacent the first oxide layer includes at least one of tantalum oxide and aluminum oxide,
wherein the storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer and is arranged between the two types of wires, and
the current in a laminate direction passes in the storage element through the two types of wires, so that the spin torque magnetization reversal occurs.