Nitride light-emitting diode with a current spreading layer
A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.
1. A nitride light-emitting diode (LED) comprising:
a current spreading layer including:
a first layer comprising a plurality of distributed insulating portions configured to have electrical current flow therebetween; and
a second layer comprising interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.
2. The LED of claim 1 , wherein the distributed insulating portions are separated by predetermined intervals.
3. The LED of claim 2 , wherein the distributed insulating portions are formed by ion implantation.
4. The LED of claim 3 , wherein the current spreading layer further includes a gradient-doped n-type nitride semiconductor layer disposed between the first and second layers and configured to repair defects in the first layer caused by the ion implantation.
5. The LED of claim 4 , wherein the current spreading layer has a thickness of about 1000 Ř20000 Å.
6. The LED of claim 4 , wherein the gradient-doped n-type nitride semiconductor layer has a thickness of about 200 Ř5000 Å.
7. The LED of claim 4 , wherein the gradient-doped n-type nitride semiconductor layer is formed by secondary growth of epitaxy, and has a silicon doping concentration that gradually changes from about 1×10 17 cm −3 to about 5×10 19 cm −3 .
8. The LED of claim 4 , wherein the gradient-doped n-type nitride semiconductor layer is formed by secondary growth of epitaxy, and has a silicon doping concentration that gradually changes from about 5×10 18 cm −3 to about 1×10 18 cm −3 .
9. The LED of claim 4 , wherein the second layer has a thickness of about 700 Ř10,000 Å, the substantially undoped nitride semiconductor layer and the n-type nitride semiconductor layer have a thickness ratio of >0.8, and a period of the interlacing layers is 1-20.
10. The LED of claim 9 , wherein the second layer has a thickness of about 1800 Ř3600 Å, the thickness ratio is 5:1, and the period is 3.
11. The LED of claim 1 , wherein the at least one substantially undoped nitride semiconductor layer has a silicon doping concentration of less than about 5×10 17 cm −3 , the at least one n-type nitride semiconductor layer has a silicon doping concentration greater than about 1×10 18 cm −3 .
12. The LED of claim 1 , wherein the first layer has a thickness of about 100 Ř5000 Å.
13. The LED of claim 1 , further comprising:
a sapphire substrate;
an n-side layer;
a p-side layer; and
a nitride semiconductor light-emitting layer disposed between the n-side layer and the p-side layer;
wherein the n-side layer comprises:
a buffer layer; and
an n-layer,
wherein the current spreading layer is formed in the n-layer, and
wherein the current spreading layer is coupled to the light-emitting layer.
14. A method of making a nitride light-emitting diode (LED), the method comprising:
forming a current spreading layer by:
forming a first layer comprising a plurality of distributed insulating portions to allow electrical current to flow therebetween; and
interlacing at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer to form a second layer,
wherein the second layer is configured to spread laterally the electrical current received from the first layer.
15. The method of claim 14 , wherein said forming a first layer comprises forming the distributed insulating portions in an n-layer by ion implantation.
16. The method of claim 15 , further comprising forming a gradient-doped n-type nitride semiconductor layer between the first and second layers and to repair defects in the first layer caused by the ion implantation.
17. A light-emitting system comprising a plurality of nitride light-emitting diodes (LEDs), each LED comprising:
a current spreading layer including:
a first layer comprising a plurality of distributed insulating portions configured to have electrical current flow therebetween; and
a second layer comprising interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.
18. The light-emitting system of claim 17 , wherein the distributed insulating portions are separated by predetermined intervals.
19. The light-emitting system of claim 18 , wherein the distributed insulating portions are formed by ion implantation.
20. The light-emitting system of claim 19 , wherein the current spreading layer further includes a gradient-doped n-type nitride semiconductor layer disposed between the first and second layers and configured to repair defects in the first layer caused by the ion implantation and to guide electrical current received from the first layer.