Optical structure of semiconductor photomultiplier and fabrication method thereof
View Patent ↗Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.
1. An optical structure of a semiconductor photomultiplier, which is formed over an upper side of the semiconductor photomultiplier having a plurality of microcells, the optical structure comprising:
a first dielectric body formed in a dead area between light receiving areas of the respective microcells and over an upper surface of a substrate in the dead area, the first dielectric body having a cross-section in which a lower side is wider than an upper side;
a second dielectric body formed in the a light receiving area of a microcell and over an upper surface of the substrate in the light receiving area, the second dielectric body having a cross-section in which a lower side is narrower than an upper side; and
an etch stop layer disposed between the upper surface of the substrate and the first and second dielectric bodies, the etch stop layer including a different material from the first dielectric layer,
wherein a refractive index of the second dielectric body is higher than that of the first dielectric body.
2. The optical structure of a semiconductor photomultiplier of claim 1 , wherein the first dielectric body has a concave triangular, a trapezoidal, a triangular, a semicircular, or a parabolic structure.
3. The optical structure of a semiconductor photomultiplier of claim 1 , wherein top surfaces of the first dielectric body and the second dielectric body are coplanar.
4. The optical structure of a semiconductor photomultiplier of claim 1 , wherein the first dielectric body includes silicon oxide, the second dielectric body includes silicon nitride, and the etch stop layer is a silicon nitride layer.
5. The optical structure of a semiconductor photomultiplier of claim 1 , wherein the first dielectric body includes porous silicon oxide, the second dielectric body includes high density silicon oxide, and the etch stop layer is a silicon nitride layer.
6. The optical structure of a semiconductor photomultiplier of claim 1 , wherein the first dielectric body includes air.
7. The optical structure of a semiconductor photomultiplier of claim 3 , wherein a side surface of the first dielectric body extends to the etch stop layer and abuts a side surface of the second dielectric body so that the cross-section of the second dielectric body is defined by the first dielectric body and the etch stop layer.
8. The optical structure of a semiconductor photomultiplier of claim 1 , wherein a refractive index of the second dielectric body 1.4 or more and a refractive index of the first dielectric body is 1.1 or less.