Method for fabricating semiconductor device
A method for fabricating a semiconductor device include forming devices on a front side of a semiconductor substrate, forming a hydrogen-containing layer on a back side of the semiconductor substrate, forming an outgassing prevention layer over the hydrogen-containing layer, and performing a hydrogen treatment process to diffuse hydrogen, contained in the hydrogen-containing layer, into the semiconductor substrate.
1. A method for fabricating a semiconductor device, comprising:
forming devices on a front side of a semiconductor substrate;
forming a hydrogen-containing layer on a back side of the semiconductor substrate;
forming an outgassing prevention layer over the hydrogen-containing layer; and
diffusing hydrogen contained in the hydrogen-containing layer into the semiconductor substrate.
2. The method of claim 1 , further comprising:
forming one or more passivation layers on the front side and the back side of the semiconductor substrate after the forming of the devices; and
exposing the back side of the semiconductor substrate.
3. The method of claim 1 , wherein the diffusing of the hydrogen is performed under a hydrogen atmosphere.
4. The method of claim 1 , wherein the outgassing prevention layer comprises a nitride layer.
5. The method of claim 4 , wherein the nitride layer comprises a plasma-enhanced (PE) nitride layer.
6. The method of claim 1 , wherein the hydrogen-containing layer comprises an oxide layer containing hydrogen.
7. The method of claim 1 , wherein the hydrogen-containing layer comprises a high density plasma (HDP) oxide layer or a tetraethyl orthosilicate (TEOS) layer.
8. The method of claim 1 , wherein the diffusing of hydrogen is performed by a deuterium/nitrogen (D 2 /N 2 ) annealing process, high pressure hydrogen/nitrogen (H 2 /N 2 ) annealing process, or an H 2 ion implantation process through the back side of the semiconductor substrate.
9. A method for fabricating a semiconductor device, comprising:
forming devices on a front side of the semiconductor substrate;
forming one or more passivation layers on the front side and the back side of the semiconductor substrate after the forming of the devices;
forming vias by simultaneously and selectively etching a back side of the semiconductor substrate and the passivation layer formed on the back side of the semiconductor substrate; and
performing a hydrogen treatment process on the semiconductor substrate through the vias to diffuse hydrogen into the semiconductor substrate.
10. The method of claim 9 , wherein the hydrogen treatment process is performed by a deuterium/nitrogen (D 2 /N 2 ) annealing process, high pressure hydrogen/nitrogen (H 2 /N 2 ) annealing process, or an H 2 ion implantation process through the back side of the semiconductor substrate.
11. A method for fabricating a semiconductor device, the method comprising:
forming devices on a front side of the semiconductor substrate;
forming vias by selectively etching a back side of the semiconductor substrate;
forming a hydrogen-containing layer to fill the vias;
forming an outgassing prevention layer over the hydrogen-containing layer; and
diffusing hydrogen contained in the hydrogen-containing layer into the semiconductor substrate.
12. The method of claim 11 , further comprising:
forming one or more passivation layers on the front side and the back side of the semiconductor substrate after the forming of the devices; and
exposing the back side of the semiconductor substrate.
13. The method of claim 11 , wherein the diffusing of hydrogen is performed under a hydrogen atmosphere.
14. The method of claim 11 , wherein the outgassing prevention layer comprises nitride layer.
15. The method of claim 14 , wherein the nitride layer comprises a plasma-enhanced (PE) nitride layer.
16. The method of claim 11 , wherein the hydrogen-containing layer comprises an oxide layer containing hydrogen.
17. The method of claim 11 , wherein the hydrogen-containing layer comprises a high density plasma (HDP) oxide layer or a tetraethyl orthosilicate (TEOS) layer.
18. The method of claim 11 , wherein the diffusing of hydrogen is performed by a deuterium/nitrogen (D 2 /N 2 ) annealing process, high pressure hydrogen/nitrogen (H 2 /N 2 ) annealing process, or an H 2 ion implantation process through the back side of the semiconductor substrate.
19. The method of claim 11 , further comprising:
directing hydrogen generated by diffusing of hydrogen process to the semiconductor substrate using the outgassing prevention layer.