Post etch treatment (PET) of a low-K dielectric film
Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
1. A method of patterning a low-k dielectric film, the method comprising:
etching a low-k dielectric layer disposed above a substrate with a first plasma process, the etching comprising forming a fluorocarbon polymer on the low-k dielectric layer;
surface-conditioning, with a second plasma process, the low-k dielectric layer to remove the fluorocarbon polymer and to form an Si—O-containing protecting layer on the low-k dielectric layer, wherein surface-conditioning the low-k dielectric layer with the second plasma process comprises using a plasma derived from an oxygen radical source and a silicon source, and wherein the silicon source is a molecule that reacts with an oxygen radical to form a silicon oxide layer on the low-k dielectric layer, the silicon source selected from the group consisting of silicon tetrafluoride (SiF 4 ), silicon tetrachloride (SiCl 4 ), silane (SiH 4 ) dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethylsilane ((CH 3 ) 3 SiH), and N -(Trimethylsilyl)dimethylamine ((CH 3) 3 SiN(CH 2 ) 2 ); and
removing the Si—O-containing protecting layer with a third plasma process.
2. The method of claim 1 , further comprising:
subsequent to removing the Si—O-containing protecting layer, treating the low-k dielectric layer with a silylation process.
3. The method of claim 2 , wherein treating the low-k dielectric layer with the silylation process lowers the effective k-value of the low-k dielectric layer relative to the effective k-value of the low-k dielectric layer following the third plasma process.
4. The method of claim 1 , wherein the oxygen radical source is a molecule with a dissociation product comprising an oxygen radical, the oxygen radical source selected from the group consisting of oxygen (O 2 ), ozone (O 3 ), carbon dioxide (CO 2 ), and water (H 2 O).
5. The method of claim 1 , wherein removing the Si—O-containing protecting layer with the third plasma process comprises using a plasma generated from a gas selected from the group consisting of NF 3 , ammonia (NH 3 ), or a combination thereof.
6. The method of claim 1 , wherein etching the low-k dielectric layer with the first plasma process comprises using a plasma generated from a C x F y -based gas.
7. A method of patterning a low-k dielectric film, the method comprising:
etching a trench in a low-k dielectric layer with a first plasma process, the low-k dielectric layer disposed above a substrate, and the etching comprising forming a fluorocarbon polymer on the low-k dielectric layer in the trench;
surface-conditioning, with a second plasma process, the low-k dielectric layer to remove the fluorocarbon polymer from the trench and to form an Si—O-containing protecting layer on the low-k dielectric layer in the trench;
removing the Si—O-containing protecting layer with a third plasma process; and
without exposing the low-k dielectric layer to a wet clean process, forming a metal layer in the trench.
8. The method of claim 7 , further comprising:
subsequent to removing the Si—O-containing protecting layer and prior to forming the metal layer, and without exposing the low-k dielectric layer to a pre-bake process, treating the low-k dielectric layer with a silylation process.
9. The method of claim 8 , wherein treating the low-k dielectric layer with the silylation process lowers the effective k-value of the low-k dielectric layer relative to the effective k-value of the low-k dielectric layer following the third plasma process.
10. The method of claim 7 , wherein surface-conditioning the low-k dielectric layer with the second plasma process comprises using a plasma derived from an oxygen radical source and a silicon source.
11. The method of claim 10 , wherein the oxygen radical source is a molecule with a dissociation product comprising an oxygen radical, the oxygen radical source selected from the group consisting of oxygen (O 2 ), ozone (O 3 ), carbon dioxide (CO 2 ), and water (H 2 O).
12. The method of claim 10 , wherein the silicon source is a molecule that reacts with an oxygen radical to form a silicon oxide layer on the low-k dielectric layer, the silicon source selected from the group consisting of silicon tetrafluoride (SiF 4 ), silicon tetrachloride (SiCl 4 ), silane (SiH 4 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethylsilane ((CH 3 ) 3 SiH), and N-(Trimethylsilyl)dimethylamine ((CH 3 ) 3 SiN(CH 2 ) 2 ).
13. The method of claim 7 , wherein removing the Si—O-containing protecting layer with the third plasma process comprises using a plasma generated from a gas selected from the group consisting of NF 3 , ammonia (NH 3 ), or a combination thereof.