Silicon carbide semiconductor device and method for producing the same
The present invention provides a technique capable of realizing a silicon carbide semiconductor device having high performance and high reliability. By constituting a channel region by an n − -type, intrinsic, or p − -type channel region and a p + -type channel region, a high channel mobility and a high threshold voltage are realized. Further, by constituting a source region by an n + -type source region and an n ++ -type source region, and forming the n + -type source region between the p + -type channel region and the n ++ -type source region, an electric field in the p + -type channel region is relaxed to suppress deterioration of a gate insulating film, and also by electrically connecting a source wiring electrode to the n ++ -type source region, a contact resistance is decreased.
1. A silicon carbide semiconductor device, comprising:
a substrate of a first conductivity type composed of silicon carbide and having a first principal surface and a second principal surface which is an opposite surface to the first principal surface;
an epitaxial layer composed of silicon carbide and formed on the first principal surface of the substrate;
a body layer of a second conductivity type different from the first conductivity type formed in the epitaxial layer from a surface of the epitaxial layer;
a source region formed in the body layer from the surface of the epitaxial layer spaced apart from an end portion of the body layer;
a channel region formed in the body layer from the surface of the epitaxial layer between an end portion of the body layer and the source region;
a gate insulating film formed in contact with the channel region;
a gate electrode formed in contact with the gate insulating film; and
a drain region of the first conductivity type formed in the substrate from the second principal surface of the substrate, wherein
the source region includes:
a first source region of the first conductivity type; and
a second source region of the first conductivity type formed in contact with the first source region between an end portion of the body layer and the first source region spaced apart from the end portion of the body layer, and
the channel region includes;
a first channel region of the second conductivity type formed in contact with the second source region between an end portion of the body layer and the second source region spaced apart from the end portion of the body layer; and
a second channel region formed in contact with the first channel region between an end portion of the body layer and the first channel region.
2. The silicon carbide semiconductor device according to claim 1 , wherein an impurity concentration in the second source region is lower than an impurity concentration in the first source region.
3. The silicon carbide semiconductor device according to claim 1 , wherein a depth of the first source region from the surface of the epitaxial layer is larger than a depth of the second source region from the surface of the epitaxial layer.
4. The silicon carbide semiconductor device according to claim 1 , wherein the second channel region exhibits conductivity of the second conductivity type, and an impurity concentration in the second channel region is lower than an impurity concentration in the first channel region.
5. The silicon carbide semiconductor device according to claim 4 , wherein a maximum impurity concentration in the first channel region is twice or more higher than a maximum impurity concentration in the second channel region.
6. The silicon carbide semiconductor device according to claim 1 , wherein the second channel region exhibits intrinsic conductivity or conductivity of the first conductivity type.
7. The silicon carbide semiconductor device according to claim 1 , wherein an ion species ion-implanted into the first source region is different from an ion species ion-implanted into the second source region.
8. The silicon carbide semiconductor device according to claim 1 , wherein the first channel region is formed by obliquely ion-implanting an impurity.
9. The silicon carbide semiconductor device according to claim 1 , wherein the device further comprises a guard ring of the first conductivity type in an outer peripheral portion of the epitaxial layer, and an impurity concentration distribution in the source region and an impurity concentration distribution in the guard ring are the same as each other.