Semiconductor device and fabrication method
A semiconductor device includes a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; and a gate electrode, a source electrode and a drain electrode that are formed on the third semiconductor layer. In the semiconductor device, the second semiconductor layer includes an impurity diffusion region in which an impurity element contained in the first semiconductor layer is diffused, the impurity diffusion region being located directly beneath the gate electrode and being in contact with the first semiconductor layer, and the impurity element causes the impurity diffusion region to be a p-type impurity diffusion region.
1. A semiconductor device comprising:
a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element;
a second semiconductor layer formed on the first semiconductor layer;
a third semiconductor layer formed on the second semiconductor layer; and
a gate electrode, a source electrode and a drain electrode that are formed on the third semiconductor layer, wherein
the second semiconductor layer includes an impurity diffusion region in which an impurity element contained in the first semiconductor layer is diffused, the impurity diffusion region being located directly beneath the gate electrode and being in contact with the first semiconductor layer, wherein
the impurity element causes the impurity diffusion region to be a p-type impurity diffusion region; and
a growth control layer between the first semiconductor layer and the second semiconductor layer, the growth control layer having an opening located directly beneath a region in which the gate electrode is formed.
2. The semiconductor device as claimed in claim 1 , wherein
the growth control layer is formed of a material containing any one of aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN), silicon oxide (SiO x ) and silicon nitride (SiN).
3. The semiconductor device as claimed in claim 1 , wherein
the growth control layer is polycrystalline or amorphous.
4. The semiconductor device as claimed in claim 1 , wherein
a thickness of the growth control layer is in a range of 5 to 50 nm.
5. The semiconductor device as claimed in claim 1 , wherein
the third semiconductor layer includes a concave-shaped gate recess in a region in which the gate electrode is formed, and the gate electrode is formed in the region including an internal area of the concave-shaped gate recess.