IP Library Granted Patent US 8,884,726
Granted Patent B2
US 8,884,726 · App. 13/204,668 · Granted Nov 11, 2014

Contact structure for electromechanical switch

Inventor: Richard Loon Sun (Taichung, TW)
Assignee: Intai Technology Corp.
H01H1/0036H01H2001/0052H01H2001/0084
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Quick Facts
Patent No.
US 8,884,726
App. No.
13/204,668
Granted
Nov 11, 2014
Kind
B2
Abstract

A contact structure for electromechanical switch includes a static contact and a moving contact to allow many kinds of actuations and provide great switch characteristics, such as high isolation and low insertion loss, for using in the applicable range from DC to high frequency microwave. In the contact structure, there is a gap disposed between the static contact and the moving contact so that the static contact and the moving contact are parallel with each other.

Claims (17)

1. A contact structure of an electromechanical switch for allowing a microwave signal transmitted therewith, comprising:

a basic layer made of a printed circuit board and including a static contact made of a printed conducting path on an upper face and a tuning circuit in the vicinity of the static contact;

a top layer made of a flexible circuit board and including a floating area made by a nick therein, a moving contact made of a printed conducting path on a lower face of the floating area, and a tuning circuit in the vicinity of the moving contact; and

a spacing layer sandwiched between the basic layer and the top layer and formed with a window through which the static contact of the basic layer is exposed to the moving, contact of the top layer, wherein the spacing layer is made with even thickness to provide a gap disposed between the static contact and the moving contact so that the static contact and the moving contact are parallel with each other;

wherein the moving contact and the static contact are micro strips for allowing the microwave signal transmitted therein, and each of the static contact and the moving contact has a predetermined line width to render a minimum overlapping contact to improve isolation;

wherein the moving contact is actuated to move and then contact the static contact for transmitting the microwave signal, and the tuning circuits in the vicinity of the static contact and the moving contact compensates impedance variation induced between the moving contact and the static contact due to line width change.

2. The contact structure of claim 1 , wherein a grounding structure is arranged at a lower surface of the basic layer.

3. The contact structure of claim 2 , wherein a lead for packaging is arranged at the lower surface of the basic layer.

4. An electromechanical switch having the contact structure of claim 3 , comprising:

an actuation device coupled to the contact structure, comprising:

a supporting member fixed to the basic laver: and

a transmission portion of the actuating device contacting the top layer having the floating area:

wherein a movement of the transmission portion drives the floating area to move downwardly and then pushes the moving contacts to contact the static contacts in order for allowing the microwave signal transmitted therein.

5. The electromechanical switch of claim 4 , wherein the actuation device comprises:

a printed coil constructed at the bottom of the basic layer; and

a magnetic material constructed at the top of the top layer and coated over the printed coil;

wherein when a current is passed through the printed coil, the magnetic material makes the moving contacts move downwardly to contact the static contacts.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2011
From: SUN, RICHARD LOON
To: INTAI TECHNOLOGY CORP.
Reel/Frame 026711/0966 →
Priority Claims (1)
TW 100119622 A · Jun 3, 2011 · national
Continuity (1)
Related Publication 20120305373A1 · Dec 6, 2012