n-Type doped PbTe and PbSe alloys for thermoelectric applications
The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe 1-x I x with carrier concentrations ranging from 5.8×10 18 -1.4×10 20 cm −3 .
1. A thermoelectric material of the formula Pb 1.002 Se 1-x Br x , wherein 0.04≦x≦0.4.
2. The thermoelectric material of claim 1 , wherein the thermoelectric figure of merit (zT) is greater than 1.2 at 850K.
3. The thermoelectric material of claim 1 , wherein the doping level is 3×10 19 Cm −3 .
4. The thermoelectric material of claim 1 , wherein 1.8×10 19 Cm −3 ≦n H ≦4.5×10 19 Cm −3 at about 300K.