Mechanical layout for half-bridge power module that is optimized for low inductance
Disclosed is a mechanical layout for a half-bride power module that is optimized for low inductance. In one embodiment, a first power module and a second power module are mounted on each side of a heat sink. An inductance cancelling bus bar is wrapped around the heat sink, the first power module and the second power module in a loop.
1. A half-bridge power module, comprising:
a heat sink;
a first power module mounted on one side of the heat sink;
a second power module mounted on another side of the heat sink opposite the side that the first power module mounts thereto; and
an inductance cancelling bus bar wrapped around the heat sink, the first power module and the second power module in a loop.
2. The half-bridge power module according to claim 1 , further comprising a capacitor bank electrically connected to both the first power module and the second power module.
3. The half-bridge power module according to claim 2 , wherein the loop formed from the inductance cancelling bus bar wrapped around the heat sink, the first power module and the second power module includes being wrapped around the capacitor bank.
4. The half-bridge power module according to claim 3 , wherein ends of the inductance cancelling bus bar are connected to each other near only one of a positive DC terminal side of the capacitor bank and a negative DC terminal of the capacitor bank.
5. The half-bridge power module according to claim 3 , wherein the inductance cancelling bus bar is wrapped around the heat sink, the first power module, the second power module and the capacitor bank without touching the heat sink, the first power module, the second power module and the capacitor bank.
6. The half-bridge power module according to claim 2 , further comprising a positive DC bus bar that electrically connects the first power module to a positive terminal of the capacitor bank.
7. The half-bridge power module according to claim 6 , further comprising a negative DC bus bar that electrically connects the second power module to a negative terminal of the capacitor bank.
8. The half-bridge power module according to claim 7 , wherein the inductance cancelling bus bar is configured to have a current flowing therein that opposes current carried by the positive DC bus bar and the negative DC bus bar.
9. The half-bridge power module according to claim 7 , further comprising an AC output bus bar electrically connected to a node connecting the first power module with the second power module.
10. The half-bridge power module according to claim 9 , wherein the AC output bus bar is located between the positive DC bus bar and the negative DC bus bar.
11. The half-bridge power module according to claim 2 , wherein the capacitor bank comprises a DC link capacitor bank.
12. The half-bridge power module according to claim 1 , wherein the first power module and the second power module each comprises an insulated gate bipolar transistor (IGBT) module.
13. A power module having a half-bridge configuration, comprising:
a heat sink;
a first IGBT power module mounted on one surface of the heat sink in a first plane that is co-planar to one surface of the heat sink;
a second IGBT power module mounted on another surface of the heat sink in a second plane that is co-planar to the another surface of the heat sink, wherein the first plane and the second plane are separated by a thickness of the heat sink;
a capacitor bank connected to both the first IGBT power module and the second IGBT power module; and
an inductance cancelling bus bar wrapped around the heat sink, the first IGBT power module and the second power IGBT module in a loop.
14. The power module according to claim 13 , wherein ends of the inductance cancelling bus bar are connected to each other near only one of a positive DC terminal side of the capacitor bank and a negative DC terminal of the capacitor bank.
15. The power module according to claim 13 , wherein the inductance cancelling bus bar is wrapped around the heat sink, the first IGBT power module, and the second IGBT power module without touching the heat sink, the first IGBT power module, and the second IGBT power module.
16. The power module according to claim 13 , further comprising a positive DC bus bar that connects the first IGBT power module to a positive terminal of the capacitor bank.
17. The power module according to claim 16 , further comprising a negative DC bus bar that connects the second IGBT power module to a negative terminal of the capacitor bank.
18. The power module according to claim 17 , wherein the inductance cancelling bus bar is configured to have a current flowing therein that opposes current carried by the positive DC bus bar and the negative DC bus bar.
19. The power module according to claim 17 , further comprising an AC output bus bar connected to a node connection of the first IGBT power module with the second IGBT power module, wherein the AC output bus bar is located between the positive DC bus bar and the negative DC bus bar.
20. The power module according to claim 13 , wherein the loop formed from the inductance cancelling bus bar wrapped around the heat sink, the first power module and the second power module includes being wrapped around the capacitor bank.