IP Library Granted Patent US 8,901,820
Granted Patent B2
US 8,901,820 · App. 13/362,052 · Granted Dec 2, 2014

Ribbon antenna for versatile operation and efficient RF power coupling

Inventors: Costel Biloiu (Rockport, MA); Craig Chaney (Lanesville, MA)
Assignee: Varian Semiconductor Equipment Associates, Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,901,820
App. No.
13/362,052
Granted
Dec 2, 2014
Kind
B2
Abstract

A plasma processing apparatus and method are disclosed which allows switching between the E and H operation modes and also increase the coupling efficiency of the RF power to the plasma. This apparatus may increase plasma density by a factor of about 1.25-1.65 for a given power output. Simultaneously, due to the high efficiency, the need to cool the antenna may be eliminated. A new antenna geometry which increases the amount of surface area for a given volume is used to take advantage of skin effects associated with RF electric current. In some embodiments, the antenna has a single turn to reduce proximity effects. The antenna may also be embedded in a ferrite material to further optimize its performance.

Claims (10)

1. A plasma generation apparatus, comprising: a chamber having a dielectric window; wherein an antenna comprises a ribbon shaded antenna and said antenna abutting said dielectric window, constructed of a material and having a thickness, a width in contact with said dielectric window, and a cross-sectional area defined as a product of said width and said thickness; and a power supply operating at a frequency and in communication with said antenna, wherein said material and said frequency determine a skin depth where most current is carried in said antenna, and wherein a product of said skin depth and said width is greater than 0.001 multiplied by said cross-sectional area of said antenna.

2. The plasma generation apparatus of claim 1 , wherein said product is greater than 0.01 multiplied by said cross-sectional area.

3. The plasma generation apparatus of claim 1 , wherein said product is greater than 0.05 multiplied by said cross-sectional area.

4. The plasma generation apparatus of claim 1 , further comprising a ferrite material, wherein said antenna is disposed between said ferrite material and said dielectric window.

5. The plasma generation apparatus of claim 4 , further comprising a potting material disposed between said antenna and said ferrite material.

6. The plasma generation apparatus of claim 1 , wherein said antenna comprises two substantially parallel portions and two semi-circular ends.

7. The plasma generation apparatus of claim 6 , wherein one of said semi-circular ends comprises a discontinuity, thereby creating two legs of said antenna.

8. The plasma generation apparatus of claim 7 , wherein a first of said legs is in communication with said power supply, and a second of said legs is in communication with a switch, wherein said first leg and second leg are electrically connected in a first position of said switch, and wherein said second leg is electrically connected to a potential different than said first leg in a second position of said switch.

9. The plasma generation apparatus of claim 8 , wherein said switch can be actuated between said first position and said second position while plasma is being generated.

10. The plasma generation apparatus of claim 1 , wherein said antenna comprises only one turn.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2012
From: BILOIU, COSTEL; CHANEY, CRAIG R.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 028758/0740 →
Continuity (1)
Related Publication 20130193848A1 · Aug 1, 2013