In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si 3 N 4 , B 4 C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5 th period transition metal.
1. A normal incidence, EUV light source collector mirror for receiving light directly from an EUV light emitting plasma and producing a shaped beam for use with a system illuminating a lithography mask with an illumination field having a pre-selected shape in a plane normal to the direction of light propagation, said mirror comprising:
a support structure;
a plurality of facets, each facet having an outline shape, and wherein the preselected shape of the illumination field and the outline shape of the facet are substantially the same.
2. A collector mirror as recited in claim 1 wherein the facets are shaped as arcs.
3. A collector mirror as recited in claim 1 wherein said mirror comprises over 50 facets.
4. A collector mirror as recited in claim 1 wherein the facets are positioned in a generally ellipsoidal pattern.
5. A collector mirror as recited in claim 1 wherein the facets are positioned in a generally parabolic pattern.
6. A collector mirror as recited in claim 1 wherein the facets are positioned in a generally near-parabolic pattern.
7. A collector mirror as recited in claim 1 further comprising a plurality of actuators, each actuator moveably mounting a respective facet to the support structure.
8. A collector mirror as recited in claim 1 wherein at least one facet comprises an off-axis surface segment of a sphere.
9. A collector mirror as recited in claim 1 wherein at least one facet comprises a surface segment of an asphere.
10. A collector mirror as recited in claim 1 wherein at least one facet comprises an on-axis surface segment of a toroid.
11. An optical arrangement for homogenizing and shaping light from an EUV light emitting plasma to a mask as an illumination field having a pre-selected shape in a plane normal to the direction of light propagation, the arrangement comprising:
an EUV reflective mirror comprising a plurality of reflective surfaces;
a normal incidence, EUV light source collector mirror for receiving light directly from the plasma, the collector mirror having a plurality of facets with each facet having an outline shape, and wherein the pre-selected shape of the illumination field and the outline shape of the facet are substantially the same.
12. An arrangement as recited in claim 11 further comprising an EUV light condenser mirror.
13. An arrangement as recited in claim 11 wherein said reflective surfaces of said EUV reflective mirror are arranged in a generally planar pattern.
14. An arrangement as recited in claim 11 wherein said facets of said collector mirror comprise a rotationally symmetric reflective surface.
15. An arrangement as recited in claim 11 wherein the facet outline is arc shaped.
16. A normal incidence, EUV light source collector mirror as recited in claim 1 wherein each of said facets comprises:
a substrate;
a smoothing layer selected from the group of materials consisting of Si, Si 3 N 4 , B 4 C, SiC and Cr, said smoothing layer material being deposited using highly energetic deposition conditions overlying said substrate; and
a multilayer EUV coating overlying said smoothing layer.
17. A normal incidence, EUV light source collector mirror as recited in claim in claim 16 wherein said deposition conditions include substrate heating.
18. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said deposition conditions include increasing particle energy during deposition.
19. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said substrate comprises SiC.
20. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said smoothing layer overlays and contacts said substrate.
21. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said multilayer coating comprises alternating layers of Mo and Si.
22. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said smoothing layer has a thickness in the range of 3 nm to 100 nm.
23. A normal incidence, EUV light source collector mirror as recited in claim 16 wherein said smoothing layer comprises an amorphous material.
24. An optical arrangement as recited in claim 11 wherein each of said facets comprises:
a substrate;
a smoothing layer selected from the group of materials consisting of Si, Si 3 N 4 , B 4 C, SiC and Cr, said smoothing layer material being deposited using highly energetic deposition conditions overlying said substrate; and
a multilayer EUV coating overlying said smoothing layer.
25. An optical arrangement as recited in claim 24 wherein said deposition conditions include substrate heating.
26. An optical arrangement as recited in claim 24 wherein said deposition conditions include increasing particle energy during deposition.
27. An optical arrangement as recited in claim 24 wherein said substrate comprises SiC.
28. An optical arrangement as recited in claim 24 wherein said smoothing layer overlays and contacts said substrate.
29. An optical arrangement as recited in claim 24 wherein said multilayer coating comprises alternating layers of Mo and Si.
30. An optical arrangement as recited in claim 24 wherein said smoothing layer has a thickness in the range of 3 nm to 100 nm.
31. An optical arrangement as recited in claim 24 wherein said smoothing layer comprises an amorphous material.