Light emitting device package
A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer.
1. A light emitting device package comprising:
a body having a cavity;
at least one insulating layer disposed on the body;
first and second electrode layers disposed on the insulating layer and electrically isolated from each other;
at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layers;
a light-transmissive resin layer sealing the light emitting device disposed in the cavity;
a metal layer disposed on a rear surface of the body to face the light emitting device; and
third and fourth diffusion layers respectively disposed in top and bottom portions of the body that are not covered by the insulating layer and the first and second electrode layers and exposed,
wherein the light emitting device is grown in a non-polar direction on a substrate and comprises a light emitting structure comprising a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer, and
wherein the third diffusion layer is disposed to be separate from the light emitting device.
2. The light emitting device package according to claim 1 , wherein the light emitting structure is grown in a non-polar a-direction on the substrate of an r-direction.
3. The light emitting device package according to claim 1 , wherein the light emitting structure is grown in a non-polar m-direction on a (1123) plane of the substrate.
4. The light emitting device package according to claim 1 , wherein the metal layer has a larger width than that of the light emitting device.
5. The light emitting device package according to claim 1 , wherein light emitted from the light emitting device has a color purity of at least 0.5.
6. The light emitting device package according to claim 1 , wherein the light-transmissive resin layer comprises at least one of a plurality of phosphors.
7. The light emitting device package according to claim 6 , wherein the phosphors comprise a first phosphor having a light emitting wavelength of 480 nm to 500 nm and a second phosphor having a light emitting wavelength of 580 nm to 620 nm.
8. The light emitting device package according to claim 1 , wherein the light emitting device emits light having a near-ultraviolet light wavelength.
9. The light emitting device package according to claim 1 , wherein the light emitting device further comprises a buffer layer grown in the non-polar direction between the substrate and the first conductive semiconductor layer.
10. The light emitting device package according to claim 1 , wherein the light-transmissive resin layer comprises a first light-transmissive resin layer having a flat upper surface.
11. The light emitting device package according to claim 10 , wherein the light-transmissive resin layer further comprises a second light-transmissive resin layer disposed on the first light-transmissive resin layer and having a dome-shaped upper portion.
12. The light emitting device package according to claim 1 , further comprising first and second diffusion layers disposed in the body, electrically connected respectively to the first and second electrode layers, and comprising impurities injected thereto.
13. The light emitting device package according to claim 1 , wherein the third and fourth diffusion layers are electrically isolated from the first and second electrode layers.
14. The light emitting device package according to claim 1 , wherein the light emitting device further comprises a reflective layer disposed between the second conductive semiconductor layer and the active layer and comprising at least one double-layered structure including an Al x Ga 1-x N superlattice layer and an Al y Ga 1-y N superlattice layer, and
wherein x and y are different from each other, and thus, the Al x Ga 1-x N superlattice layer and the Al y Ga 1-y N superlatticen layer have different refractive indexes.
15. The light emitting device package according to claim 14 , wherein the active layer comprises at least one pair structure of a well layer and a barrier layer, and the reflective layer has a higher energy band gap than that of the barrier layer.
16. The light emitting device package according to claim 15 , wherein y is greater than x.
17. The light emitting device package according to claim 15 , wherein 0.2≦x≦0.3 and 0.3≦y≦1.
18. The light emitting device package according to claim 15 , wherein the reflective layer is doped with a second conductive dopant.
19. The light emitting device package according to claim 15 , wherein the second conductive semiconductor layer comprises a material having a higher electrical conductivity than that of AlGaN.