Organic light emitting diode display and manufacturing method thereof

1. An organic light emitting diode display comprising:

a substrate;

a first electrode on the substrate;

a light-emitting layer on the first electrode, the light-emitting layer comprising a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer;

a second electrode on the light-emitting layer; and

a p-doping layer between the first electrode and the light-emitting layer,

wherein the p-doping layer is in only some of a red pixel corresponding to the red light-emitting layer, a blue pixel corresponding to the blue light-emitting layer, and a green pixel corresponding to the green light-emitting layer.

2. The organic light emitting diode display of claim 1 ,

wherein the p-doping layer is in at least one of a red pixel corresponding to the red light-emitting layer or a blue pixel corresponding to the blue light-emitting layer.

3. The organic light emitting diode display of claim 1 ,

wherein the p-doping layer is in only the red pixel corresponding to the red light-emitting layer.

4. The organic light emitting diode display of claim 1 , further comprising at least one of a hole injection layer (HIL) and a hole transport layer (HTL) between the first electrode and the light-emitting layer.

5. The organic light emitting diode display of claim 1 , wherein the p-doping layer comprises at least one of hexanitril hexaazatriphenylene, trifluoro-tetracyanoquinodimethane (F4-TCNQ), lithium quinolate (LiQ) FeC13, F16CuPc, a compound represented by the following Chemical Formula 1, or a metal oxide

6. The organic light emitting diode display of claim 5 , wherein the metal oxide comprises vanadium oxide (V2O5), rhenium oxide (Re2O7), or indium tin oxide.

7. The organic light emitting diode display of claim 1 , wherein a thickness of the p-doping layer is about 10 Å to about 200 Å.

8. The organic light emitting diode display of claim 1 , wherein the p-doping layer comprises a resonance auxiliary layer.

9. The organic light emitting diode display of claim 8 , wherein the resonance auxiliary layer is in a matrix, and

wherein a p-doping material is in the matrix.

10. The organic light emitting diode display of claim 9 , wherein the p-doping material is about 0.1 wt % to about 30 wt % of the matrix.

11. An organic light emitting diode display comprising:

a substrate;

a first electrode on the substrate;

a light-emitting layer on the first electrode;

a second electrode on the light-emitting layer;

a hole injection layer (HIL) and a hole transport layer (HTL) between the first electrode and the light-emitting layer; and

a p-doping layer between the first electrode and the light-emitting layer,

wherein the hole injection layer (HIL) and the hole transport layer (HTL) are between the first electrode and the light-emitting layer, and

wherein the p-doping layer is between the hole injection layer (HIL) and the hole transport layer (HTL).

12. A manufacturing method of an organic light emitting diode display, the method comprising:

forming a first electrode on a substrate;

forming a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer on the first electrode;

forming a second electrode on each of the light-emitting layers; and

forming a p-doping layer between the first electrode and respective light-emitting layers in only some of a red pixel corresponding to the red light-emitting layer, a blue pixel corresponding to the blue light-emitting layer, and a green pixel corresponding to the green light-emitting layer.

13. The manufacturing method of an organic light emitting diode display of claim 12 ,

wherein the p-doping layer is in at least one of a red pixel corresponding to the red light-emitting layer and a blue pixel corresponding to the blue light-emitting layer.

14. The manufacturing method of an organic light emitting diode display of claim 12 ,

wherein the p-doping layer is in all only the red pixel corresponding to the red light-emitting layer.