Method for manufacturing stretchable thin film transistor
Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.
1. A method for manufacturing a stretchable thin film transistor, the method comprising:
forming a mold substrate;
forming a stretchable insulator on the mold substrate;
forming a flat substrate on the stretchable insulator;
removing the mold substrate;
forming corrugated wires on the stretchable insulator;
forming a thin film transistor connected between the corrugated wires; and
removing the flat substrate,
wherein forming the corrugated wires comprises:
forming discontinuous wires on the stretchable insulator;
thermally expanding the discontinuous wires and the stretchable insulator, a thermal expansion coefficient of the stretchable insulator being greater than a thermal expansion coefficient of the discontinuous wires; and
quenching the thermally expanded wires and the thermally expanded discontinuous stretchable insulator to form the corrugated wires.
2. The method of claim 1 , wherein the mold substrate comprises a bottom substrate and photoresist patterns on the bottom substrate.
3. The method of claim 2 , wherein the bottom substrate contacts a device area on the stretchable insulator, and
the photoresist patterns contact a wire area on the stretchable insulator.
4. The method of claim 3 , wherein the device area of the stretchable insulator is thicker than that of the wire area.
5. The method of claim 1 , wherein thermally expanding the discontinuous wires and the stretchable insulator is performed at a temperature in a range of about 100° C. to about 300° C.
6. The method of claim 1 , further comprising forming an interconnection wire connecting the thin film transistor to the corrugated wires.
7. The method of claim 6 , wherein the interconnection wire is formed by using a printing method.
8. The method of claim 1 , wherein the stretchable insulator comprises poly-dimethyllesiloxane (PDMS).
9. A method for manufacturing a stretchable thin film transistor, the method comprising:
forming a stretchable insulator on a substrate;
forming corrugated wires on the stretchable insulator;
forming a thin film transistor connected to the corrugated wires; and
removing the substrate,
wherein forming the corrugated wires comprises:
forming discontinuous wires on the stretchable insulator;
thermally expanding the discontinuous wires and the stretchable insulator, a thermal expansion coefficient of the stretchable insulator being greater than a thermal expansion coefficient of the discontinuous wires; and
quenching the thermally expanded wires and the thermally expanded discontinuous stretchable insulator to form the corrugated wires.
10. The method of claim 9 , further comprises forming an interconnection wire connecting the thin film transistor to the corrugated wires.
11. The method of claim 10 , wherein the interconnection wire is formed by using a printing method.
12. The method of claim 1 , wherein the thermal expansion coefficient of the stretchable insulator is equal to or greater than 20times of the thermal expansion coefficient of the discontinuous wires.
13. The method of claim 9 , wherein the thermal expansion coefficient of the stretchable insulator is equal to or greater than 20times of the thermal expansion coefficient of the discontinuous wires.