Nanodevice arrays for electrical energy storage, capture and management and method for their formation
An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material. Further, the vertical nanotube device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed between the first material and the second material. The first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column and extends to the second distal end of the column within the first material. Both the first material and the second material are exposed at the first distal end of the column.
1. A vertical nanotube device, comprising:
a nanotube column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
a first material disposed inside the column;
a second material disposed inside the column; and
a third material disposed between the first material and the second material,
wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
wherein both the first material and the second material are exposed at opposite distal ends of the column, and
wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device.
2. A vertical nanotube device, comprising:
a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
a first material disposed within the column;
a second material disposed within the column; and
a third material disposed between the first material and the second material,
wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
wherein both the first material and the second material are exposed at opposite distal ends of the column,
wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
wherein the first material and the second material are concentrically disposed within the column.
3. The vertical nanotube device of claim 1 , further comprising:
a first wiring structure operatively connected to an exposed end of the first material; and
a second wiring structure operatively connected to an exposed end of the second material,
wherein the first and the second wiring structures are configured on a top surface of the column.
4. A vertical nanotube device, comprising:
a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
a first material disposed within the column;
a second material disposed within the column; and
a third material disposed between the first material and the second material,
wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
wherein both the first material and the second material are exposed at opposite distal ends of the column,
wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
wherein the third material comprises one of an electrical insulator and an electrolyte.
5. The vertical nanotube device of claim 1 , wherein the vertical nanotube device comprises one of an electrostatic capacitor, a battery, a supercapacitor, a solar cell, a light emitting diode and a laser.
6. The vertical nanotube device of claim 1 , wherein the first material and the second material are electrically conducting.
7. The vertical nanotube device of claim 1 , wherein one of the first material and the second material comprises an electron donating material, and wherein the other of the first material and the second material comprises an electron accepting material.
8. The vertical nanotube device of claim 1 , wherein the anodic oxide material is selected from the group consisting of aluminum oxide, titanium oxide, silicon, or a dielectric material.
9. The vertical nanotube device of claim 1 , further comprising:
a passivation layer disposed on a surface between the anodic oxide material and the first material.
10. The vertical nanotube device of claim 1 , further comprising:
a first conductive layer disposed between the anodic oxide material and the first material; and
a second conductive layer disposed on an outer surface of the second material.
11. The vertical nanotube device of claim 10 , wherein the first conductive layer and the second conductive layer each comprise a material selected from the group consisting of a metal or a conducting compound.
12. A vertical nanotube device, comprising:
a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material;
a first material disposed within the column;
a second material disposed within the column; and
a third material disposed between the first material and the second material,
wherein the first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column,
wherein the second material fills the first distal end of the column and extends to the second distal end of the column within the first material,
wherein both the first material and the second material are exposed at opposite distal ends of the column,
wherein the vertical nanotube device is perpendicular or substantially perpendicular to a substrate of the vertical nanotube device, and
wherein one of the first material and the second material comprises an n-type semiconductor material, and wherein the other of the first material and the second material comprises a p-type semiconductor material.
13. The vertical nanotube device of claim 1 , wherein the anodic oxide material comprises a rectangular patterned area disposed on the substrate.
14. The vertical nanotube device of claim 4 , wherein the electrolyte comprises one of a solid, gel or polymer electrolyte.
15. The vertical nanotube device of claim 4 , wherein the first material and the second material each comprise a material selected from the group consisting of a metal oxide, carbon and silicon.
16. The vertical nanotube device of claim 1 , wherein one of the first material and the second material comprises a metal layer, and wherein the other of the first material and the second material comprises a semiconductor material.
17. The vertical nanotube device of claim 16 , wherein the vertical nanotube device comprises a Schottky barrier.